Presentation 2019-01-18
InGaN quantum well tunable single-mode semiconductor lasers with deeply-etched periodic structures
Masahiro Uemukai, So Kusumoto, Daiki Tazuke, Jumpei Tajima, Toshiki Hikosaka, Shinya Nunoue, Ryuji Katayama,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English) Nitride semiconductors such as GaN and AlN have strong optical nonlinearity and can be applied to wavelength conversion devices. 200-nm band deep UV light and 800-nm band squeezed light can be obtained from such devices pumped by 400-nm band InGaN QW single-mode lasers. The single-mode lasers with deeply etched periodic structure can be fabricated by simple process without high-resolution EB lithography and epitaxial regrowth. By current injection to the periodic structures, wavelength tuning can be expected. In this work, we design two types of InGaN tunable single-mode lasers and report their fabrication process.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) Semiconductor lasers / Wavelength tuning / Single-mode lasers / DBR lasers / Slotted lasers
Paper # PN2018-76,EMT2018-110,OPE2018-185,LQE2018-195,EST2018-123,MWP2018-94
Date of Issue 2019-01-10 (PN, EMT, OPE, LQE, EST, MWP)

Conference Information
Committee PN / EMT / OPE / EST / MWP / LQE / IEE-EMT
Conference Date 2019/1/17(2days)
Place (in Japanese) (See Japanese page)
Place (in English) Osaka University Nakanoshima Center
Topics (in Japanese) (See Japanese page)
Topics (in English)
Chair Hiroshi Hasegawa(Nagoya Univ.) / Akira Hirose(Univ. of Tokyo) / Kouki Sato(Furukawa Electric Industries) / Akimasa Hirata(Nagoya Inst. of Tech.) / Tetsuya Kawanishi(Waseda Univ.) / Kiichi Hamamoto(Kyusyu Univ.) / Keiji Goto(National Defense Academy)
Vice Chair Haruki Ogoshi(Furukawa Electric) / Takehiro Tsuritani(KDDI Research) / Hideaki Furukawa(NICT) / Koichi Hirayama(Kitami Inst. of Tech.) / Hiroshi Takahashi(Sophia Univ.) / Shinichiro Ohnuki(Nihon Univ.) / Masayuki Kimishima(Advantest) / Jun Shibayama(Hosei Univ.) / Naoto Yoshimoto(Chitose Inst. of Science and Tech.) / Hiroshi Aruga(Mitsubishi Electric)
Secretary Haruki Ogoshi(NICT) / Takehiro Tsuritani(Univ. of Fukui) / Hideaki Furukawa(NTT) / Koichi Hirayama(Tokyo Metro. Coll. of Tech) / Hiroshi Takahashi(Fukuoka Inst.of Tech.) / Shinichiro Ohnuki(Univ. of Tokyo) / Masayuki Kimishima(NICT) / Jun Shibayama(CIST) / Naoto Yoshimoto(National Inst. of Tech.,Sendai College) / Hiroshi Aruga(NICT) / (Chiba Inst. of Tech.)
Assistant Keijiro Suzuki(AIST) / Junichiro Sugisaka(Kitami Inst. of Tech.) / Yuya Shoji(Tokyo Inst. of Tech.) / Kazunori Seno(NTT) / Takahiro Ito(Nagoya Inst. of Tech.) / Kazuhiro Fujita(Fujitsu) / Kensuke Ikeda(CRIEPI) / Kosuke Nishimura(KDDI Research) / Masaya Nagai(Osaka Univ.) / Yoshihiro Naka(Kyushu Univ. of Health and Welfare)

Paper Information
Registration To Technical Committee on Photonic Network / Technical Committee on Electromagnetic Theory / Technical Committee on OptoElectronics / Technical Committee on Electronics Simulation Technology / Technical Committee on Microwave and Millimeter-wave Photonics / Technical Committee on Lasers and Quantum Electronics / Technical Meeting on Electromagnetic Theory
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) InGaN quantum well tunable single-mode semiconductor lasers with deeply-etched periodic structures
Sub Title (in English)
Keyword(1) Semiconductor lasers
Keyword(2) Wavelength tuning
Keyword(3) Single-mode lasers
Keyword(4) DBR lasers
Keyword(5) Slotted lasers
1st Author's Name Masahiro Uemukai
1st Author's Affiliation Osaka University(Osaka Univ.)
2nd Author's Name So Kusumoto
2nd Author's Affiliation Osaka University(Osaka Univ.)
3rd Author's Name Daiki Tazuke
3rd Author's Affiliation Osaka University(Osaka Univ.)
4th Author's Name Jumpei Tajima
4th Author's Affiliation Toshiba Corporation(Toshiba)
5th Author's Name Toshiki Hikosaka
5th Author's Affiliation Toshiba Corporation(Toshiba)
6th Author's Name Shinya Nunoue
6th Author's Affiliation Toshiba Corporation(Toshiba)
7th Author's Name Ryuji Katayama
7th Author's Affiliation Osaka University(Osaka Univ.)
Date 2019-01-18
Paper # PN2018-76,EMT2018-110,OPE2018-185,LQE2018-195,EST2018-123,MWP2018-94
Volume (vol) vol.118
Number (no) PN-396,EMT-397,OPE-398,LQE-399,EST-400,MWP-401
Page pp.pp.243-246(PN), pp.243-246(EMT), pp.243-246(OPE), pp.243-246(LQE), pp.243-246(EST), pp.243-246(MWP),
#Pages 4
Date of Issue 2019-01-10 (PN, EMT, OPE, LQE, EST, MWP)