| Presentation | 2018-12-18 [Invited Talk] High-Speed Performance of InP-, Sb- and GaN-based HEMTs Akira Endoh, Issei Watanabe, Yoshimi Yamashita, Akifumi Kasamatsu, Hiroki Fujishiro, Takashi Mimura, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | We have fabricated nanometer-scale InP-, Sb- and GaN-based HEMTs by using electron beam lithography and measured their characteristics. For InP-based InGaAs/InAs/InGaAs channel HEMTs, we measured cryogenic characteristics. Cutoff frequency fT and maximum oscillation frequency fmax increase under cryogenic conditions. The extent of increase for fmax is much more than that for fT. For InSb channel HEMTs, we obtained an fT of 316 GHz by using two-step-recessed gateprocess. For GaN-based HEMTs, we proposed MIS-HEMTs with triple-layer insulators. We obtained an fT of 235 GHz for InAlN/AlN/GaN HEMTs with InAlN thickness of 3 nm and gate length of 45 nm. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | High Electron Mobility Transistor / HEMT / InP / Sb / GaN / Cutoff frequency / Maximum oscillation frequency |
| Paper # | ED2018-62 |
| Date of Issue | 2018-12-10 (ED) |
| Conference Information | |
| Committee | ED |
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| Conference Date | 2018/12/17(2days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | RIEC, Tohoku Univ. |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Millimeter-wave, terahertz-wave devices and systems |
| Chair | Kunio Tsuda(Toshiba) |
| Vice Chair | Michihiko Suhara(TMU) |
| Secretary | Michihiko Suhara(NICT) |
| Assistant | Tatsuya Iwata(TUT) / Junji Kotani(Fjitsu Lab.) |
| Paper Information | |
| Registration To | Technical Committee on Electron Devices |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | [Invited Talk] High-Speed Performance of InP-, Sb- and GaN-based HEMTs |
| Sub Title (in English) | |
| Keyword(1) | High Electron Mobility Transistor |
| Keyword(2) | HEMT |
| Keyword(3) | InP |
| Keyword(4) | Sb |
| Keyword(5) | GaN |
| Keyword(6) | Cutoff frequency |
| Keyword(7) | Maximum oscillation frequency |
| 1st Author's Name | Akira Endoh |
| 1st Author's Affiliation | National Institute of Information and Communications Technology(NICT) |
| 2nd Author's Name | Issei Watanabe |
| 2nd Author's Affiliation | National Institute of Information and Communications Technology(NICT) |
| 3rd Author's Name | Yoshimi Yamashita |
| 3rd Author's Affiliation | National Institute of Information and Communications Technology(NICT) |
| 4th Author's Name | Akifumi Kasamatsu |
| 4th Author's Affiliation | National Institute of Information and Communications Technology(NICT) |
| 5th Author's Name | Hiroki Fujishiro |
| 5th Author's Affiliation | Tokyo University of Science(Tokyo Univ. of Science) |
| 6th Author's Name | Takashi Mimura |
| 6th Author's Affiliation | National Institute of Information and Communications Technology(NICT) |
| Date | 2018-12-18 |
| Paper # | ED2018-62 |
| Volume (vol) | vol.118 |
| Number (no) | ED-368 |
| Page | pp.pp.35-38(ED), |
| #Pages | 4 |
| Date of Issue | 2018-12-10 (ED) |