Presentation 2018-12-25
Effect of atomic hydrogen annealing on AlOx/GeOx/a-Ge stack structure fabricated in O2 ambient
Tomofumi Onuki, Akira Heya, Naoto Matsuo,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English)
Keyword(in Japanese) (See Japanese page)
Keyword(in English)
Paper # EID2018-6,SDM2018-79
Date of Issue 2018-12-18 (EID, SDM)

Conference Information
Committee EID / SDM / ITE-IDY
Conference Date 2018/12/25(1days)
Place (in Japanese) (See Japanese page)
Place (in English)
Topics (in Japanese) (See Japanese page)
Topics (in English)
Chair Yuko Kominami(Shizuoka Univ.) / Takahiro Shinada(Tohoku Univ.)
Vice Chair Mutsumi Kimura(Ryukoku Univ.) / Tomokazu Shiga(Univ. of Electro-Comm.) / Rumiko Yamaguchi(Akita Univ.) / Hiroshige Hirano(TowerJazz Panasonic)
Secretary Mutsumi Kimura(NTT) / Tomokazu Shiga(Tokyo Inst. of Tech.) / Rumiko Yamaguchi(Shizuoka Univ.) / Hiroshige Hirano(TOSHIBA MEMORY)
Assistant Hiroyuki Nitta(Japan Display) / Mitsuru Nakata(NHK) / Ryosuke Nonaka(Toshiba) / Takeshi Okuno(Huawei) / Takahiro Mori(AIST) / Nobuaki Kobayashi(Nihon Univ.)

Paper Information
Registration To Technical Committee on Electronic Information Displays / Technical Committee on Silicon Device and Materials / Technical Group on Information Display
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Effect of atomic hydrogen annealing on AlOx/GeOx/a-Ge stack structure fabricated in O2 ambient
Sub Title (in English)
Keyword(1)
1st Author's Name Tomofumi Onuki
1st Author's Affiliation University of Hyogo(Univ. Hyogo)
2nd Author's Name Akira Heya
2nd Author's Affiliation University of Hyogo(Univ. Hyogo)
3rd Author's Name Naoto Matsuo
3rd Author's Affiliation University of Hyogo(Univ. Hyogo)
Date 2018-12-25
Paper # EID2018-6,SDM2018-79
Volume (vol) vol.118
Number (no) EID-379,SDM-380
Page pp.pp.21-24(EID), pp.21-24(SDM),
#Pages 4
Date of Issue 2018-12-18 (EID, SDM)