Presentation | 2018-12-06 Simulation analysis of the write error rate of voltage-torque MRAM Hiroshi Imamura, |
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Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | Voltage torque MRAM, where the information is written by using the voltage control of the magntic anisotropy, has attracted much attention as a fast and ultra-low-power non-volatile memory. We introduce the operation principles of the voltage-torque MRAM and report the results of our simulation analysis of the write error rate which is one of the key properties for practical applications. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | non-volatile memory / MRAM / voltage-torque / magnetic anisotropy / write error rate |
Paper # | MRIS2018-23 |
Date of Issue | 2018-11-29 (MRIS) |
Conference Information | |
Committee | MRIS / ITE-MMS |
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Conference Date | 2018/12/6(2days) |
Place (in Japanese) | (See Japanese page) |
Place (in English) | Ehime University |
Topics (in Japanese) | (See Japanese page) |
Topics (in English) | Signal Processing and Others |
Chair | Satoshi Matsunuma(Maxell) / Norihiko Ishii(NHK) |
Vice Chair | |
Secretary | (Toshiba) / (Kinki Univ.) |
Assistant | Ikuya Tagawa(Tohoku Inst. of Tech.) / Hiroko Arai(AIST) |
Paper Information | |
Registration To | Technical Committee on Magnetic Recording & Information Storage / Technical Group on Multi-media Storage |
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Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | Simulation analysis of the write error rate of voltage-torque MRAM |
Sub Title (in English) | |
Keyword(1) | non-volatile memory |
Keyword(2) | MRAM |
Keyword(3) | voltage-torque |
Keyword(4) | magnetic anisotropy |
Keyword(5) | write error rate |
1st Author's Name | Hiroshi Imamura |
1st Author's Affiliation | National Institute of Advanced Industrial Science and Technology (AIST)(AIST) |
Date | 2018-12-06 |
Paper # | MRIS2018-23 |
Volume (vol) | vol.118 |
Number (no) | MRIS-347 |
Page | pp.pp.19-23(MRIS), |
#Pages | 5 |
Date of Issue | 2018-11-29 (MRIS) |