Presentation 2018-12-06
Simulation analysis of the write error rate of voltage-torque MRAM
Hiroshi Imamura,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English) Voltage torque MRAM, where the information is written by using the voltage control of the magntic anisotropy, has attracted much attention as a fast and ultra-low-power non-volatile memory. We introduce the operation principles of the voltage-torque MRAM and report the results of our simulation analysis of the write error rate which is one of the key properties for practical applications.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) non-volatile memory / MRAM / voltage-torque / magnetic anisotropy / write error rate
Paper # MRIS2018-23
Date of Issue 2018-11-29 (MRIS)

Conference Information
Committee MRIS / ITE-MMS
Conference Date 2018/12/6(2days)
Place (in Japanese) (See Japanese page)
Place (in English) Ehime University
Topics (in Japanese) (See Japanese page)
Topics (in English) Signal Processing and Others
Chair Satoshi Matsunuma(Maxell) / Norihiko Ishii(NHK)
Vice Chair
Secretary (Toshiba) / (Kinki Univ.)
Assistant Ikuya Tagawa(Tohoku Inst. of Tech.) / Hiroko Arai(AIST)

Paper Information
Registration To Technical Committee on Magnetic Recording & Information Storage / Technical Group on Multi-media Storage
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Simulation analysis of the write error rate of voltage-torque MRAM
Sub Title (in English)
Keyword(1) non-volatile memory
Keyword(2) MRAM
Keyword(3) voltage-torque
Keyword(4) magnetic anisotropy
Keyword(5) write error rate
1st Author's Name Hiroshi Imamura
1st Author's Affiliation National Institute of Advanced Industrial Science and Technology (AIST)(AIST)
Date 2018-12-06
Paper # MRIS2018-23
Volume (vol) vol.118
Number (no) MRIS-347
Page pp.pp.19-23(MRIS),
#Pages 5
Date of Issue 2018-11-29 (MRIS)