| Presentation | 2018-12-25 Effects of SiOx Capping Film on Crystallization of Ge Film for Flash Lamp Annealing (Ⅱ) Yoshiki akita, Naoto Matsuo, Kazuyuki Kohama, Kazuhiro Ito, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | We examined the effect of SiOx capping film on Ge films in FLA. The crystallinity was different between SPC and LPC. At SPC, the crystalline fraction was increased by the capping film for 60 nm-thick Ge film, although it decreased with the capping film for 15 - 60 nm at LPC. Many small grains with a diameter of approximately 10 nm was observed in SEM image. In addition, it was found by Raman spectral that the ?c-Ge decreased as the film thickness increased for the LPC. The XRD results showed that the grain growth with (111), (220) and (311) planes becomes remarkable as the film thickness increased. It is considered that the ?c-Ge serves as a nucleus for Ge crystallization by LPC. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Ge / crystallization / Flash lamp annealing / SiOx capping film |
| Paper # | EID2018-5,SDM2018-78 |
| Date of Issue | 2018-12-18 (EID, SDM) |
| Conference Information | |
| Committee | EID / SDM / ITE-IDY |
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| Conference Date | 2018/12/25(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | Yuko Kominami(Shizuoka Univ.) / Takahiro Shinada(Tohoku Univ.) |
| Vice Chair | Mutsumi Kimura(Ryukoku Univ.) / Tomokazu Shiga(Univ. of Electro-Comm.) / Rumiko Yamaguchi(Akita Univ.) / Hiroshige Hirano(TowerJazz Panasonic) |
| Secretary | Mutsumi Kimura(NTT) / Tomokazu Shiga(Tokyo Inst. of Tech.) / Rumiko Yamaguchi(Shizuoka Univ.) / Hiroshige Hirano(TOSHIBA MEMORY) |
| Assistant | Hiroyuki Nitta(Japan Display) / Mitsuru Nakata(NHK) / Ryosuke Nonaka(Toshiba) / Takeshi Okuno(Huawei) / Takahiro Mori(AIST) / Nobuaki Kobayashi(Nihon Univ.) |
| Paper Information | |
| Registration To | Technical Committee on Electronic Information Displays / Technical Committee on Silicon Device and Materials / Technical Group on Information Display |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Effects of SiOx Capping Film on Crystallization of Ge Film for Flash Lamp Annealing (Ⅱ) |
| Sub Title (in English) | |
| Keyword(1) | Ge |
| Keyword(2) | crystallization |
| Keyword(3) | Flash lamp annealing |
| Keyword(4) | SiOx capping film |
| 1st Author's Name | Yoshiki akita |
| 1st Author's Affiliation | University of Hyogo(Univ. of Hyogo) |
| 2nd Author's Name | Naoto Matsuo |
| 2nd Author's Affiliation | University of Hyogo(Univ. of Hyogo) |
| 3rd Author's Name | Kazuyuki Kohama |
| 3rd Author's Affiliation | Osaka University(Osaka Univ.) |
| 4th Author's Name | Kazuhiro Ito |
| 4th Author's Affiliation | Osaka University(Osaka Univ.) |
| Date | 2018-12-25 |
| Paper # | EID2018-5,SDM2018-78 |
| Volume (vol) | vol.118 |
| Number (no) | EID-379,SDM-380 |
| Page | pp.pp.17-20(EID), pp.17-20(SDM), |
| #Pages | 4 |
| Date of Issue | 2018-12-18 (EID, SDM) |