| Presentation | 2018-12-25 Study for hole- or electron- conduction of DNA/Si-MOSFET Hibiki Nakano, Naoto Mastuo, Akira Heya, Kazushige Yamana, Tadao Takada, Kousuke Moritani, Norio Inui, Yu Sato, Tadashi Sato, Shin Yokoyama, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | DNA was irradiated with Ar-cluster. A large change was observed in the current value before and after the irradiation. It seems that DNA has changed due to Ar-cluster. SIMS (Secondary Ion Mass Spectrometry) was performed simultaneously with the Ar-cluster, and a peak related to DNA base was observed. It seems that there was a big change in the shape of DNA. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | DNA/Si-MOSFET / Secondary Ion Mass Spectrometry |
| Paper # | EID2018-7,SDM2018-80 |
| Date of Issue | 2018-12-18 (EID, SDM) |
| Conference Information | |
| Committee | EID / SDM / ITE-IDY |
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| Conference Date | 2018/12/25(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | Yuko Kominami(Shizuoka Univ.) / Takahiro Shinada(Tohoku Univ.) |
| Vice Chair | Mutsumi Kimura(Ryukoku Univ.) / Tomokazu Shiga(Univ. of Electro-Comm.) / Rumiko Yamaguchi(Akita Univ.) / Hiroshige Hirano(TowerJazz Panasonic) |
| Secretary | Mutsumi Kimura(NTT) / Tomokazu Shiga(Tokyo Inst. of Tech.) / Rumiko Yamaguchi(Shizuoka Univ.) / Hiroshige Hirano(TOSHIBA MEMORY) |
| Assistant | Hiroyuki Nitta(Japan Display) / Mitsuru Nakata(NHK) / Ryosuke Nonaka(Toshiba) / Takeshi Okuno(Huawei) / Takahiro Mori(AIST) / Nobuaki Kobayashi(Nihon Univ.) |
| Paper Information | |
| Registration To | Technical Committee on Electronic Information Displays / Technical Committee on Silicon Device and Materials / Technical Group on Information Display |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Study for hole- or electron- conduction of DNA/Si-MOSFET |
| Sub Title (in English) | |
| Keyword(1) | DNA/Si-MOSFET |
| Keyword(2) | Secondary Ion Mass Spectrometry |
| 1st Author's Name | Hibiki Nakano |
| 1st Author's Affiliation | University of Hyogo(Univ. Hyogo) |
| 2nd Author's Name | Naoto Mastuo |
| 2nd Author's Affiliation | University of Hyogo(Univ. Hyogo) |
| 3rd Author's Name | Akira Heya |
| 3rd Author's Affiliation | University of Hyogo(Univ. Hyogo) |
| 4th Author's Name | Kazushige Yamana |
| 4th Author's Affiliation | University of Hyogo(Univ. Hyogo) |
| 5th Author's Name | Tadao Takada |
| 5th Author's Affiliation | University of Hyogo(Univ. Hyogo) |
| 6th Author's Name | Kousuke Moritani |
| 6th Author's Affiliation | University of Hyogo(Univ. Hyogo) |
| 7th Author's Name | Norio Inui |
| 7th Author's Affiliation | University of Hyogo(Univ. Hyogo) |
| 8th Author's Name | Yu Sato |
| 8th Author's Affiliation | University of Hyogo(Univ. Hyogo) |
| 9th Author's Name | Tadashi Sato |
| 9th Author's Affiliation | Hiroshima University(Hiroshima Univ.) |
| 10th Author's Name | Shin Yokoyama |
| 10th Author's Affiliation | Hiroshima University(Hiroshima Univ.) |
| Date | 2018-12-25 |
| Paper # | EID2018-7,SDM2018-80 |
| Volume (vol) | vol.118 |
| Number (no) | EID-379,SDM-380 |
| Page | pp.pp.25-28(EID), pp.25-28(SDM), |
| #Pages | 4 |
| Date of Issue | 2018-12-18 (EID, SDM) |