| Presentation | 2018-12-25 Double-Gate Cu-MIC Poly-Ge TFT on Plastic Substrate Hiroki Utsumi, Kuninori Kitahara, Shinya Tsukada, Hitoshi Suzuki, Akito Hara, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Polycrystalline-germanium (poly-Ge) thin-film transistor (TFT) with double gate (DG) structure was fabricated via metal induced crystallization (MIC) using copper (Cu) on coated polyimide (PI) substrate. The fabricated TFT was adopted aluminum (Al) induced lateral metallization source drain (Al-LM-SD), which reduces parasitic resistance of SD. It realized on/off ratio of 1.5×103 and nominal mobility of 18 cm2/Vs. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Poly-Ge / Plastic Substrate / Flexible / Thin-Film Transistor / TFT / Metal Induced Crystallization / MIC |
| Paper # | EID2018-4,SDM2018-77 |
| Date of Issue | 2018-12-18 (EID, SDM) |
| Conference Information | |
| Committee | EID / SDM / ITE-IDY |
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| Conference Date | 2018/12/25(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | Yuko Kominami(Shizuoka Univ.) / Takahiro Shinada(Tohoku Univ.) |
| Vice Chair | Mutsumi Kimura(Ryukoku Univ.) / Tomokazu Shiga(Univ. of Electro-Comm.) / Rumiko Yamaguchi(Akita Univ.) / Hiroshige Hirano(TowerJazz Panasonic) |
| Secretary | Mutsumi Kimura(NTT) / Tomokazu Shiga(Tokyo Inst. of Tech.) / Rumiko Yamaguchi(Shizuoka Univ.) / Hiroshige Hirano(TOSHIBA MEMORY) |
| Assistant | Hiroyuki Nitta(Japan Display) / Mitsuru Nakata(NHK) / Ryosuke Nonaka(Toshiba) / Takeshi Okuno(Huawei) / Takahiro Mori(AIST) / Nobuaki Kobayashi(Nihon Univ.) |
| Paper Information | |
| Registration To | Technical Committee on Electronic Information Displays / Technical Committee on Silicon Device and Materials / Technical Group on Information Display |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Double-Gate Cu-MIC Poly-Ge TFT on Plastic Substrate |
| Sub Title (in English) | |
| Keyword(1) | Poly-Ge |
| Keyword(2) | Plastic Substrate |
| Keyword(3) | Flexible |
| Keyword(4) | Thin-Film Transistor |
| Keyword(5) | TFT |
| Keyword(6) | Metal Induced Crystallization |
| Keyword(7) | MIC |
| 1st Author's Name | Hiroki Utsumi |
| 1st Author's Affiliation | Tohoku Gakuin University(Tohoku Gakuin Univ.) |
| 2nd Author's Name | Kuninori Kitahara |
| 2nd Author's Affiliation | Shimane University(Shimane Univ.) |
| 3rd Author's Name | Shinya Tsukada |
| 3rd Author's Affiliation | Shimane University(Shimane Univ.) |
| 4th Author's Name | Hitoshi Suzuki |
| 4th Author's Affiliation | Tohoku Gakuin University(Tohoku Gakuin Univ.) |
| 5th Author's Name | Akito Hara |
| 5th Author's Affiliation | Tohoku Gakuin University(Tohoku Gakuin Univ.) |
| Date | 2018-12-25 |
| Paper # | EID2018-4,SDM2018-77 |
| Volume (vol) | vol.118 |
| Number (no) | EID-379,SDM-380 |
| Page | pp.pp.1-4(EID), pp.1-4(SDM), |
| #Pages | 4 |
| Date of Issue | 2018-12-18 (EID, SDM) |