| 講演名 | 2018-11-22 Power Distribution Network (PDN) Modeling of the Perforated Planes in A Silicon Interposer for High Bandwidth Memory (HBM) Kyungjun Cho(KAIST), Youngwoo Kim(KAIST), Subin Kim(KAIST), Hyunwook Park(KAIST), Junyong Park(KAIST), Seongsoo Lee(KAIST), Joungho Kim(KAIST), |
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| 抄録(和) | In this paper, we first propose models of the power distribution network (PDN) of perforated power and ground (P/G) planes including substrate effects for a silicon interposer. Since it is almost impossible to simulate high-density perforated PDN structure, we suggest modeling methodology for perforated planes to reduce simulation time significantly with high accuracy. To obtain PDN impedance of silicon interposer faster, we convert the perforated planes to solid planes with a dielectric mixture. Previously, the basic air-filled structure of equivalent solid planes is designed from the EM simulation. The resistance (R) and inductance (L) of solid planes are similarly obtained by comparing those of perforated planes. Then, the capacitance (C) and conductance (G) of perforated planes are precisely calcaled based on the conformal mapping method. From the calculated C and G, the physical dimension and material properties of the dielectric mixture of solid planes are determined respectively. Because the PDN of a silicon interposer consists of a periodic structure, we design and analyze unit cell of PDN thoroughly. From the unit cell analysis, the electrical characteristic of an entire PDN can be successfully estimated. The PDN impedance of proposed solid and perforated planes and the simulation time to obtain each PDN impedance are compared evaluated respectively. The proposed methodology is validated by full 3-D electromagnetic (EM) simulation in the frequency range from 0.01 to 20 GHz. |
| 抄録(英) | In this paper, we first propose models of the power distribution network (PDN) of perforated power and ground (P/G) planes including substrate effects for a silicon interposer. Since it is almost impossible to simulate high-density perforated PDN structure, we suggest modeling methodology for perforated planes to reduce simulation time significantly with high accuracy. To obtain PDN impedance of silicon interposer faster, we convert the perforated planes to solid planes with a dielectric mixture. Previously, the basic air-filled structure of equivalent solid planes is designed from the EM simulation. The resistance (R) and inductance (L) of solid planes are similarly obtained by comparing those of perforated planes. Then, the capacitance (C) and conductance (G) of perforated planes are precisely calcaled based on the conformal mapping method. From the calculated C and G, the physical dimension and material properties of the dielectric mixture of solid planes are determined respectively. Because the PDN of a silicon interposer consists of a periodic structure, we design and analyze unit cell of PDN thoroughly. From the unit cell analysis, the electrical characteristic of an entire PDN can be successfully estimated. The PDN impedance of proposed solid and perforated planes and the simulation time to obtain each PDN impedance are compared evaluated respectively. The proposed methodology is validated by full 3-D electromagnetic (EM) simulation in the frequency range from 0.01 to 20 GHz. |
| キーワード(和) | Conformal mapping / High bandwidth memory / Power distribution network / Silicon interposer |
| キーワード(英) | Conformal mapping / High bandwidth memory / Power distribution network / Silicon interposer |
| 資料番号 | EMCJ2018-62 |
| 発行日 | 2018-11-15 (EMCJ) |
| 研究会情報 | |
| 研究会 | EMCJ / IEE-EMC / IEE-MAG |
|---|---|
| 開催期間 | 2018/11/22(から2日開催) |
| 開催地（和） | KAIST（韓国大田市） |
| 開催地（英） | KAIST |
| テーマ（和） | EMC Joint Workshop 2018, Daejon |
| テーマ（英） | EMC Joint Workshop 2018, Daejon |
| 委員長氏名（和） | 和田 修己(京大) / 山崎 健一(電中研) / 山口 正洋(東北大) |
| 委員長氏名（英） | Osami Wada(Kyoto Univ.) / Ken-ichi Yamazaki(Central Research Institute of Electric Power Industory) / Masahiro Yamaguchi(Tohoku Univ.) |
| 副委員長氏名（和） | 王 建青(名工大) |
| 副委員長氏名（英） | Kensei Oh(Nagoya Inst. of Tech.) |
| 幹事氏名（和） | 青柳 貴洋(東工大) / 白木 康博(三菱電機) / 石上 忍(東北学院大) / 池畑 政輝(鉄道総研) / 小原 学(明治大) / 山田 啓壽(東芝) |
| 幹事氏名（英） | Takahiro Aoyagi(Tokyo Inst. of Tech.) / Yasuhiro Shiraki(Mitsubishi Electric) / Shinobu Ishigami(Tohoku Gakuin Univ.) / Masateru Ikehata(RTRI) / Gaku Obara(Meji Univ.) / Keiju Yamada(Toshiba Co.) |
| 幹事補佐氏名（和） | 長澤 忍(三菱電機) / 山本 真一郎(兵庫県立大) / 鵜生 高徳(デンソー) / 井渕 貴章(大阪大) |
| 幹事補佐氏名（英） | Shinobu Nagasawa(Mitsubishi Electric) / Shinichiro Yamamoto(Univ. of Hyogo) / Takanori Unou(Denso) / Takaaki Ibuchi(Osaka Univ.) |
| 講演論文情報詳細 | |
| 申込み研究会 | Technical Committee on Electromagnetic Compatibility / Technical Meeting on Electromagnetic Compatibility / Technical Meeting on Magnetics |
|---|---|
| 本文の言語 | ENG |
| タイトル（和） | |
| サブタイトル（和） | |
| タイトル（英） | Power Distribution Network (PDN) Modeling of the Perforated Planes in A Silicon Interposer for High Bandwidth Memory (HBM) |
| サブタイトル（和） | |
| キーワード(1)（和/英） | Conformal mapping / Conformal mapping |
| キーワード(2)（和/英） | High bandwidth memory / High bandwidth memory |
| キーワード(3)（和/英） | Power distribution network / Power distribution network |
| キーワード(4)（和/英） | Silicon interposer / Silicon interposer |
| 第 1 著者 氏名（和/英） | Kyungjun Cho / Kyungjun Cho |
| 第 1 著者 所属（和/英） | Korea Advanced Institute of Science and Technology(略称：KAIST) Korea Advanced Institute of Science and Technology(略称：KAIST) |
| 第 2 著者 氏名（和/英） | Youngwoo Kim / Youngwoo Kim |
| 第 2 著者 所属（和/英） | Korea Advanced Institute of Science and Technology(略称：KAIST) Korea Advanced Institute of Science and Technology(略称：KAIST) |
| 第 3 著者 氏名（和/英） | Subin Kim / Subin Kim |
| 第 3 著者 所属（和/英） | Korea Advanced Institute of Science and Technology(略称：KAIST) Korea Advanced Institute of Science and Technology(略称：KAIST) |
| 第 4 著者 氏名（和/英） | Hyunwook Park / Hyunwook Park |
| 第 4 著者 所属（和/英） | Korea Advanced Institute of Science and Technology(略称：KAIST) Korea Advanced Institute of Science and Technology(略称：KAIST) |
| 第 5 著者 氏名（和/英） | Junyong Park / Junyong Park |
| 第 5 著者 所属（和/英） | Korea Advanced Institute of Science and Technology(略称：KAIST) Korea Advanced Institute of Science and Technology(略称：KAIST) |
| 第 6 著者 氏名（和/英） | Seongsoo Lee / Seongsoo Lee |
| 第 6 著者 所属（和/英） | Korea Advanced Institute of Science and Technology(略称：KAIST) Korea Advanced Institute of Science and Technology(略称：KAIST) |
| 第 7 著者 氏名（和/英） | Joungho Kim / Joungho Kim |
| 第 7 著者 所属（和/英） | Korea Advanced Institute of Science and Technology(略称：KAIST) Korea Advanced Institute of Science and Technology(略称：KAIST) |
| 発表年月日 | 2018-11-22 |
| 資料番号 | EMCJ2018-62 |
| 巻番号（vol） | vol.118 |
| 号番号（no） | EMCJ-317 |
| ページ範囲 | pp.21-21(EMCJ), |
| ページ数 | 1 |
| 発行日 | 2018-11-15 (EMCJ) |