Presentation 2018-12-07
Autonomous SCM capacity adjustment method in SCM/NAND flash hybrid storage
Chihiro Matsui, Ken Takeuchi,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English) Performance of hybrid storage with storage class memory (SCM) and NAND flash memory is improved by using SCM as non-volatile cache. The problem is high bit cost of SCMs. Furthermore, the optimum SCM capacity depends on application characteristics. The proposed method adjusts autonomously SCM capacity by observing application dependent access frequency in NAND flash memory. As a result, both the operating storage cost reduction and high performance achieved.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) NAND flash memory / storage class memory (SCM) / autonomous capacity adjustment
Paper # CPM2018-94,ICD2018-55,IE2018-73
Date of Issue 2018-11-28 (CPM, ICD, IE)

Conference Information
Committee VLD / DC / CPSY / RECONF / CPM / ICD / IE / IPSJ-SLDM / IPSJ-EMB / IPSJ-ARC
Conference Date 2018/12/5(3days)
Place (in Japanese) (See Japanese page)
Place (in English) Satellite Campus Hiroshima
Topics (in Japanese) (See Japanese page)
Topics (in English) Design Gaia 2018 -New Field of VLSI Design-
Chair Noriyuki Minegishi(Mitsubishi Electric) / Satoshi Fukumoto(Tokyo Metropolitan Univ.) / Koji Nakano(Hiroshima Univ.) / Masato Motomura(Hokkaido Univ.) / Fumihiko Hirose(Yamagata Univ.) / Hideto Hidaka(Renesas) / Takayuki Hamamoto(Tokyo Univ. of Science) / Yutaka Tamiya(Fujitsu Laboratories) / 渡辺 晴美(東海大) / 井上 弘士(九大)
Vice Chair Nozomu Togawa(Waseda Univ.) / Hiroshi Takahashi(Ehime Univ.) / Hidetsugu Irie(Univ. of Tokyo) / Takashi Miyoshi(Fujitsu) / Yuichiro Shibata(Nagasaki Univ.) / Kentaro Sano(RIKEN) / Mayumi Takeyama(Kitami Inst. of Tech.) / Makoto Nagata(Kobe Univ.) / Hideaki Kimata(NTT) / Kazuya Kodama(NII)
Secretary Nozomu Togawa(NTT) / Hiroshi Takahashi(Aizu Univ.) / Hidetsugu Irie(Tokyo Inst. of Tech.) / Takashi Miyoshi(Nihon Univ.) / Yuichiro Shibata(Utsunomiya Univ.) / Kentaro Sano(Hokkaido Univ.) / Mayumi Takeyama(Hiroshima City Univ.) / Makoto Nagata(e-trees.Japan) / Hideaki Kimata(Toyohashi Univ. of Tech.) / Kazuya Kodama(NTT) / (Panasonic) / (Tohoku Univ.) / (KDDI Research)
Assistant / / Yasuaki Ito(Hiroshima Univ.) / Tomoaki Tsumura(Nagoya Inst. of Tech.) / Yuuki Kobayashi(NEC) / Hiroki Nakahara(Tokyo Inst. of Tech.) / Yasuo Kimura(Tokyo Univ. of Tech.) / Hideki Nakazawa(Hirosaki Univ.) / Tomoaki Terasako(Ehime Univ.) / Hiroyuki Ito(Tokyo Inst. of Tech.) / Masatoshi Tsuge(Socionext) / Tetsuya Hirose(Kobe Univ.) / Kazuya Hayase(NTT) / Yasutaka Matsuo(NHK) / Hiroe Iwasaki(NTT)

Paper Information
Registration To Technical Committee on VLSI Design Technologies / Technical Committee on Dependable Computing / Technical Committee on Computer Systems / Technical Committee on Reconfigurable Systems / Technical Committee on Component Parts and Materials / Technical Committee on Integrated Circuits and Devices / Technical Committee on Image Engineering / Special Interest Group on System and LSI Design Methodology / Special Interest Group on Embedded Systems / Special Interest Group on System Architecture
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Autonomous SCM capacity adjustment method in SCM/NAND flash hybrid storage
Sub Title (in English)
Keyword(1) NAND flash memory
Keyword(2) storage class memory (SCM)
Keyword(3) autonomous capacity adjustment
1st Author's Name Chihiro Matsui
1st Author's Affiliation Chuo University(Chuo Univ.)
2nd Author's Name Ken Takeuchi
2nd Author's Affiliation Chuo University(Chuo Univ.)
Date 2018-12-07
Paper # CPM2018-94,ICD2018-55,IE2018-73
Volume (vol) vol.118
Number (no) CPM-336,ICD-337,IE-338
Page pp.pp.29-30(CPM), pp.29-30(ICD), pp.29-30(IE),
#Pages 2
Date of Issue 2018-11-28 (CPM, ICD, IE)