Presentation 2018-11-01
Effect on nitrogen doping to ZnO films of nitrogen radical supply generated on Ir catalyst surface
Taro Saito, Yuki Adachi, Ryuta Iba, Shotaro Ono, Koichiro Oishi, Hironori Katagiri, Kanji Yasui,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English) The large bandgap and large exciton binding energy of ZnO have recently stimulated intensive research into optoelectronic device applications, such as light-emitting diodes and laser diodes in the ultraviolet region. We previously developed a new chemical vapor deposition method for ZnO film growth using a catalytic reaction over Pt-nanoparticles between hydrogen and oxygen. ZnO films grown on a-plane sapphire substrates using this method exhibited excellent optical and electronic properties. In order to fabricate ZnO-based light-emitting diodes and laser diodes, preparation of p-type ZnO films is required. In the present study, we have attempted nitrogen doping of ZnO films by decomposition of NO gas using a heated Ir wire during film growth. In X-ray photoelectron spectra, multiple overlapping N-1s peaks were observed from 395 to 406 eV. By deconvolving the spectra, components such as Zn-N, N-N, N-H, and NOx were identified. The relative intensity of the Zn-N peak at 395.5?361.1 eV increased when the heated Ir wire was used to decompose the NO gas.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) catalytic reaction / high-temperature H2O beam / Ir hot-wire / nitrogen doping
Paper # CPM2018-42
Date of Issue 2018-10-25 (CPM)

Conference Information
Committee CPM / IEE-MAG
Conference Date 2018/11/1(2days)
Place (in Japanese) (See Japanese page)
Place (in English) Machinaka campus Nagaoka
Topics (in Japanese) (See Japanese page)
Topics (in English) Functional materials (semiconductors, magnetic materials, dielectric materials, transparent conductors, semiconductors, etc.) Thin film processes / materials / devices, etc.
Chair Fumihiko Hirose(Yamagata Univ.) / Masahiro Yamaguchi(Tohoku Univ.)
Vice Chair Mayumi Takeyama(Kitami Inst. of Tech.) / Gaku Ohara(Meiji Univ.) / Keiji Yamada(Toshiba)
Secretary Mayumi Takeyama(Toyohashi Univ. of Tech.) / Gaku Ohara(NTT) / Keiji Yamada
Assistant Yasuo Kimura(Tokyo Univ. of Tech.) / Hideki Nakazawa(Hirosaki Univ.) / Tomoaki Terasako(Ehime Univ.)

Paper Information
Registration To Technical Committee on Component Parts and Materials / Technical Meeting on Magnetics
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Effect on nitrogen doping to ZnO films of nitrogen radical supply generated on Ir catalyst surface
Sub Title (in English)
Keyword(1) catalytic reaction
Keyword(2) high-temperature H2O beam
Keyword(3) Ir hot-wire
Keyword(4) nitrogen doping
1st Author's Name Taro Saito
1st Author's Affiliation Nagaoka University of Technology(Nagaoka Univ. of Tech.)
2nd Author's Name Yuki Adachi
2nd Author's Affiliation Nagaoka University of Technology(Nagaoka Univ. of Tech.)
3rd Author's Name Ryuta Iba
3rd Author's Affiliation Nagaoka University of Technology(Nagaoka Univ. of Tech.)
4th Author's Name Shotaro Ono
4th Author's Affiliation Nagaoka University of Technology(Nagaoka Univ. of Tech.)
5th Author's Name Koichiro Oishi
5th Author's Affiliation National Institute of Technology, Nagaoka College(Nat. Inst. Tech., Nagaoka Coll.)
6th Author's Name Hironori Katagiri
6th Author's Affiliation National Institute of Technology, Nagaoka College(Nat. Inst. Tech., Nagaoka Coll.)
7th Author's Name Kanji Yasui
7th Author's Affiliation Nagaoka University of Technology(Nagaoka Univ. of Tech.)
Date 2018-11-01
Paper # CPM2018-42
Volume (vol) vol.118
Number (no) CPM-276
Page pp.pp.5-9(CPM),
#Pages 5
Date of Issue 2018-10-25 (CPM)