| Presentation | 2018-11-29 Fabrication of FeSxOy thin film by tartaric acid added three-step pulse electrochemical deposition and fabrication of ZnO/FeSxOy heterojunction solar cell Wen Ji, Masaya Ichimura, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | FeS2 is a p-type semiconductor with a narrow band gap and thus is regarded as a good absorber in a heterojunction solar cell. Semi-transparent FeSxOy thin films were deposited by three-step pulse electrochemical deposition (ECD) method. The deposited film contained considerable amount of oxygen and thus was labeled "FeSxOy". In this work, we try to control oxygen content in the FeSxOy thin films by adding tartaric acid as a complexing agent in the deposition solution. The O/Fe ratio is reduced from 1.19 to 0.24 by adding 50 mM tartaric acid. p-type conductivity was confirmed by the photoelectrochemical measurement. ZnO is an n-type semiconductor having a band gap of about 3.2 eV. We fabricate a ZnO / FeSxOy heterojunction by ECD and observe rectification properties. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | FeS2 / ZnO / Tartaric Acid / Electrochemical Deposition / Solar cell |
| Paper # | ED2018-40,CPM2018-74,LQE2018-94 |
| Date of Issue | 2018-11-22 (ED, CPM, LQE) |
| Conference Information | |
| Committee | ED / LQE / CPM |
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| Conference Date | 2018/11/29(2days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Nagoya Inst. tech. |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Nitride Semiconductor Devices, Materials, Related Technologies |
| Chair | Kunio Tsuda(Toshiba) / Kiichi Hamamoto(Kyusyu Univ.) / Fumihiko Hirose(Yamagata Univ.) |
| Vice Chair | Michihiko Suhara(TMU) / Hiroshi Aruga(Mitsubishi Electric) / Mayumi Takeyama(Kitami Inst. of Tech.) |
| Secretary | Michihiko Suhara(NICT) / Hiroshi Aruga(Saga Univ.) / Mayumi Takeyama(SEI) |
| Assistant | Tatsuya Iwata(TUT) / Junji Kotani(Fjitsu Lab.) / Masaya Nagai(Osaka Univ.) / Yasuo Kimura(Tokyo Univ. of Tech.) / Hideki Nakazawa(Hirosaki Univ.) / Tomoaki Terasako(Ehime Univ.) |
| Paper Information | |
| Registration To | Technical Committee on Electron Devices / Technical Committee on Lasers and Quantum Electronics / Technical Committee on Component Parts and Materials |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Fabrication of FeSxOy thin film by tartaric acid added three-step pulse electrochemical deposition and fabrication of ZnO/FeSxOy heterojunction solar cell |
| Sub Title (in English) | |
| Keyword(1) | FeS2 |
| Keyword(2) | ZnO |
| Keyword(3) | Tartaric Acid |
| Keyword(4) | Electrochemical Deposition |
| Keyword(5) | Solar cell |
| 1st Author's Name | Wen Ji |
| 1st Author's Affiliation | Nagoya Institute of Technology(NIT) |
| 2nd Author's Name | Masaya Ichimura |
| 2nd Author's Affiliation | Nagoya Institute of Technology(NIT) |
| Date | 2018-11-29 |
| Paper # | ED2018-40,CPM2018-74,LQE2018-94 |
| Volume (vol) | vol.118 |
| Number (no) | ED-330,CPM-331,LQE-332 |
| Page | pp.pp.35-39(ED), pp.35-39(CPM), pp.35-39(LQE), |
| #Pages | 5 |
| Date of Issue | 2018-11-22 (ED, CPM, LQE) |