| Presentation | 2018-11-30 Effects of annealing ambient on electrical properties of ALD-Al2O3/AlGaN/GaN MIS-HEMTs Keita Furuoka, Toshiharu Kubo, Makoto Miyoshi, Takashi Egawa, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | We conducted post-deposition annealing (PDA) and post-metalization annealing in various annealing atmosphere and evaluated the effect of annealing ambient on device characteristics of ALD-Al2O3/AlGaN/GaN MIS-HEMT. We also evaluated the Al2O3/AlGaN interface by XPS analysis. The ⊿Vth with FG-PMA decreased to 1 V at a relatively low temperature of 400℃. XPS analysis confirmed the termination of nitrogen dangling bonds by hydrogen atoms. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | GaN / MIS / HEMT / PDA / PMA |
| Paper # | ED2018-42,CPM2018-76,LQE2018-96 |
| Date of Issue | 2018-11-22 (ED, CPM, LQE) |
| Conference Information | |
| Committee | ED / LQE / CPM |
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| Conference Date | 2018/11/29(2days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Nagoya Inst. tech. |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Nitride Semiconductor Devices, Materials, Related Technologies |
| Chair | Kunio Tsuda(Toshiba) / Kiichi Hamamoto(Kyusyu Univ.) / Fumihiko Hirose(Yamagata Univ.) |
| Vice Chair | Michihiko Suhara(TMU) / Hiroshi Aruga(Mitsubishi Electric) / Mayumi Takeyama(Kitami Inst. of Tech.) |
| Secretary | Michihiko Suhara(NICT) / Hiroshi Aruga(Saga Univ.) / Mayumi Takeyama(SEI) |
| Assistant | Tatsuya Iwata(TUT) / Junji Kotani(Fjitsu Lab.) / Masaya Nagai(Osaka Univ.) / Yasuo Kimura(Tokyo Univ. of Tech.) / Hideki Nakazawa(Hirosaki Univ.) / Tomoaki Terasako(Ehime Univ.) |
| Paper Information | |
| Registration To | Technical Committee on Electron Devices / Technical Committee on Lasers and Quantum Electronics / Technical Committee on Component Parts and Materials |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Effects of annealing ambient on electrical properties of ALD-Al2O3/AlGaN/GaN MIS-HEMTs |
| Sub Title (in English) | |
| Keyword(1) | GaN |
| Keyword(2) | MIS |
| Keyword(3) | HEMT |
| Keyword(4) | PDA |
| Keyword(5) | PMA |
| 1st Author's Name | Keita Furuoka |
| 1st Author's Affiliation | Nagoya Institute of Technology(Nagoya Inst. of Tech.) |
| 2nd Author's Name | Toshiharu Kubo |
| 2nd Author's Affiliation | Nagoya Institute of Technology(Nagoya Inst. of Tech.) |
| 3rd Author's Name | Makoto Miyoshi |
| 3rd Author's Affiliation | Nagoya Institute of Technology(Nagoya Inst. of Tech.) |
| 4th Author's Name | Takashi Egawa |
| 4th Author's Affiliation | Nagoya Institute of Technology(Nagoya Inst. of Tech.) |
| Date | 2018-11-30 |
| Paper # | ED2018-42,CPM2018-76,LQE2018-96 |
| Volume (vol) | vol.118 |
| Number (no) | ED-330,CPM-331,LQE-332 |
| Page | pp.pp.45-48(ED), pp.45-48(CPM), pp.45-48(LQE), |
| #Pages | 4 |
| Date of Issue | 2018-11-22 (ED, CPM, LQE) |