| Presentation | 2018-11-30 GaN-based verticalcavity surfaceemitting lasers with buried SiO2 optical waveguide structures Iida Ryosuke, Natsumi Hayashi, Wataru Muranaga, Syo Iwayama, Tetsuya Takeuchi, Satoshi Kamiyama, Motoaki Iwaya, Isamu Akasaki, |
|---|---|
| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | We have investigated buried SiO2 optical waveguide structures towards low threshold current in GaN-based vertical cavity surface emitting lasers (VCSELs). In this study, a relation between the buried SiO2 thickness and all the possible modes were calculated. Then, we have optimized a fabrication process of the structure with a sufficient buried SiO2 thickness. Finally, we fabricated GaN-based VCSELs with the buried SiO2 structure. We then demonstrated a room-temperature continuous-wave operation of the VCSEL, showing a reduction of the threshold current and the operation with higher-order modes due to waveguide structure. The maximum light output power was 2.7 mW, and an external differential quantum efficiency was 11%. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | GaN / VCSEL / waveguide |
| Paper # | ED2018-47,CPM2018-81,LQE2018-101 |
| Date of Issue | 2018-11-22 (ED, CPM, LQE) |
| Conference Information | |
| Committee | ED / LQE / CPM |
|---|---|
| Conference Date | 2018/11/29(2days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Nagoya Inst. tech. |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Nitride Semiconductor Devices, Materials, Related Technologies |
| Chair | Kunio Tsuda(Toshiba) / Kiichi Hamamoto(Kyusyu Univ.) / Fumihiko Hirose(Yamagata Univ.) |
| Vice Chair | Michihiko Suhara(TMU) / Hiroshi Aruga(Mitsubishi Electric) / Mayumi Takeyama(Kitami Inst. of Tech.) |
| Secretary | Michihiko Suhara(NICT) / Hiroshi Aruga(Saga Univ.) / Mayumi Takeyama(SEI) |
| Assistant | Tatsuya Iwata(TUT) / Junji Kotani(Fjitsu Lab.) / Masaya Nagai(Osaka Univ.) / Yasuo Kimura(Tokyo Univ. of Tech.) / Hideki Nakazawa(Hirosaki Univ.) / Tomoaki Terasako(Ehime Univ.) |
| Paper Information | |
| Registration To | Technical Committee on Electron Devices / Technical Committee on Lasers and Quantum Electronics / Technical Committee on Component Parts and Materials |
|---|---|
| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | GaN-based verticalcavity surfaceemitting lasers with buried SiO2 optical waveguide structures |
| Sub Title (in English) | |
| Keyword(1) | GaN |
| Keyword(2) | VCSEL |
| Keyword(3) | waveguide |
| 1st Author's Name | Iida Ryosuke |
| 1st Author's Affiliation | Meijo University(Meijo Univ.) |
| 2nd Author's Name | Natsumi Hayashi |
| 2nd Author's Affiliation | *(*) |
| 3rd Author's Name | Wataru Muranaga |
| 3rd Author's Affiliation | Meijo University(Meijo Univ.) |
| 4th Author's Name | Syo Iwayama |
| 4th Author's Affiliation | Meijo University(Meijo Univ.) |
| 5th Author's Name | Tetsuya Takeuchi |
| 5th Author's Affiliation | Meijo University(Meijo Univ.) |
| 6th Author's Name | Satoshi Kamiyama |
| 6th Author's Affiliation | Meijo University(Meijo Univ.) |
| 7th Author's Name | Motoaki Iwaya |
| 7th Author's Affiliation | Meijo University(Meijo Univ.) |
| 8th Author's Name | Isamu Akasaki |
| 8th Author's Affiliation | Meijo University/Nagoya University(Meijo Univ./Nagoya Univ.) |
| Date | 2018-11-30 |
| Paper # | ED2018-47,CPM2018-81,LQE2018-101 |
| Volume (vol) | vol.118 |
| Number (no) | ED-330,CPM-331,LQE-332 |
| Page | pp.pp.71-74(ED), pp.71-74(CPM), pp.71-74(LQE), |
| #Pages | 4 |
| Date of Issue | 2018-11-22 (ED, CPM, LQE) |