| Presentation | 2018-11-29 Scanning internal photoemission microscopy measurements of n-GaN Schottky contacts under applying voltage Kenji Shiojima, Masataka Maeda, Tomoyoshi Mishima, |
|---|---|
| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | We applied scanning internal photoemission microscopy (SIPM) method to characterize the initial stage of the degradation by in-situ applying voltage stress. For the contacts with a slightly larger reverse current of around a pA order at -50 V, the photocurrent (Y) maps were also uniform at Vbias =0 V, but over Vbias = -36 V, the Y was intensively increased at small spots. After such SIPM measurements, the both forward and reverse I-V characteristics became leaky, and in the microscope image of the electrode, dark spots appeared in the same pattern as the Y map. We can conclude that the small portions of the electrode were degraded upon the SIPM measurement at Vbias = -36 V, and the leakage paths with lower Schottky barrier height were formed. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | GaN / Schottky contacts / scanning internal photoemission microscopy / degradation by applying voltage stress |
| Paper # | ED2018-36,CPM2018-70,LQE2018-90 |
| Date of Issue | 2018-11-22 (ED, CPM, LQE) |
| Conference Information | |
| Committee | ED / LQE / CPM |
|---|---|
| Conference Date | 2018/11/29(2days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Nagoya Inst. tech. |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Nitride Semiconductor Devices, Materials, Related Technologies |
| Chair | Kunio Tsuda(Toshiba) / Kiichi Hamamoto(Kyusyu Univ.) / Fumihiko Hirose(Yamagata Univ.) |
| Vice Chair | Michihiko Suhara(TMU) / Hiroshi Aruga(Mitsubishi Electric) / Mayumi Takeyama(Kitami Inst. of Tech.) |
| Secretary | Michihiko Suhara(NICT) / Hiroshi Aruga(Saga Univ.) / Mayumi Takeyama(SEI) |
| Assistant | Tatsuya Iwata(TUT) / Junji Kotani(Fjitsu Lab.) / Masaya Nagai(Osaka Univ.) / Yasuo Kimura(Tokyo Univ. of Tech.) / Hideki Nakazawa(Hirosaki Univ.) / Tomoaki Terasako(Ehime Univ.) |
| Paper Information | |
| Registration To | Technical Committee on Electron Devices / Technical Committee on Lasers and Quantum Electronics / Technical Committee on Component Parts and Materials |
|---|---|
| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Scanning internal photoemission microscopy measurements of n-GaN Schottky contacts under applying voltage |
| Sub Title (in English) | |
| Keyword(1) | GaN |
| Keyword(2) | Schottky contacts |
| Keyword(3) | scanning internal photoemission microscopy |
| Keyword(4) | degradation by applying voltage stress |
| Keyword(5) | |
| 1st Author's Name | Kenji Shiojima |
| 1st Author's Affiliation | University of Fukui(Univ. of Fukui) |
| 2nd Author's Name | Masataka Maeda |
| 2nd Author's Affiliation | University of Fukui(Univ. of Fukui) |
| 3rd Author's Name | Tomoyoshi Mishima |
| 3rd Author's Affiliation | Hosei University(Hosei Univ.) |
| Date | 2018-11-29 |
| Paper # | ED2018-36,CPM2018-70,LQE2018-90 |
| Volume (vol) | vol.118 |
| Number (no) | ED-330,CPM-331,LQE-332 |
| Page | pp.pp.17-20(ED), pp.17-20(CPM), pp.17-20(LQE), |
| #Pages | 4 |
| Date of Issue | 2018-11-22 (ED, CPM, LQE) |