| Presentation | 2018-11-30 A 2.5-kV-breakdown-voltage AlGaN-channel HFET with a strain-controlled AlGaInN barrier layer Daiki Hosomi, Keita Furuoka, Heng Chen, Saki Saito, Toshiharu Kubo, Takashi Egawa, Makoto Miyoshi, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Novel AlGaN-channel heterostructures employing quaternary AlGaInN barriers were grown by metalorganic chemical vapor deposition, and their structural and electrical characteristics were evaluated. The structural characterizations confirmed that a sample with an In-rich barrier layer exhibited a small in-plane strain in the barrier layer and crack-free smooth surface morphology. The strain-controlled AlGaInN/AlGaN heterostructure showed an excellent thermal stability in its 2DEG properties even at high temperature up to 900°C. In addition, a fabricated MIS-HFET device exhibited good pinch-off characteristics with a contact resistance of 10.5 Ωmm. Furthermore, an extremely high off-state breakdown voltage of approximately 2.5 kV was obtained for the device. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Power device / AlGaN-channel HFET / MOCVD / AlGaInN |
| Paper # | ED2018-41,CPM2018-75,LQE2018-95 |
| Date of Issue | 2018-11-22 (ED, CPM, LQE) |
| Conference Information | |
| Committee | ED / LQE / CPM |
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| Conference Date | 2018/11/29(2days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Nagoya Inst. tech. |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Nitride Semiconductor Devices, Materials, Related Technologies |
| Chair | Kunio Tsuda(Toshiba) / Kiichi Hamamoto(Kyusyu Univ.) / Fumihiko Hirose(Yamagata Univ.) |
| Vice Chair | Michihiko Suhara(TMU) / Hiroshi Aruga(Mitsubishi Electric) / Mayumi Takeyama(Kitami Inst. of Tech.) |
| Secretary | Michihiko Suhara(NICT) / Hiroshi Aruga(Saga Univ.) / Mayumi Takeyama(SEI) |
| Assistant | Tatsuya Iwata(TUT) / Junji Kotani(Fjitsu Lab.) / Masaya Nagai(Osaka Univ.) / Yasuo Kimura(Tokyo Univ. of Tech.) / Hideki Nakazawa(Hirosaki Univ.) / Tomoaki Terasako(Ehime Univ.) |
| Paper Information | |
| Registration To | Technical Committee on Electron Devices / Technical Committee on Lasers and Quantum Electronics / Technical Committee on Component Parts and Materials |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | A 2.5-kV-breakdown-voltage AlGaN-channel HFET with a strain-controlled AlGaInN barrier layer |
| Sub Title (in English) | |
| Keyword(1) | Power device |
| Keyword(2) | AlGaN-channel HFET |
| Keyword(3) | MOCVD |
| Keyword(4) | AlGaInN |
| 1st Author's Name | Daiki Hosomi |
| 1st Author's Affiliation | Nagoya Institute of Technology(Nagoya Inst. of Tech.) |
| 2nd Author's Name | Keita Furuoka |
| 2nd Author's Affiliation | Nagoya Institute of Technology(Nagoya Inst. of Tech.) |
| 3rd Author's Name | Heng Chen |
| 3rd Author's Affiliation | Nagoya Institute of Technology(Nagoya Inst. of Tech.) |
| 4th Author's Name | Saki Saito |
| 4th Author's Affiliation | Nagoya Institute of Technology(Nagoya Inst. of Tech.) |
| 5th Author's Name | Toshiharu Kubo |
| 5th Author's Affiliation | Nagoya Institute of Technology(Nagoya Inst. of Tech.) |
| 6th Author's Name | Takashi Egawa |
| 6th Author's Affiliation | Nagoya Institute of Technology(Nagoya Inst. of Tech.) |
| 7th Author's Name | Makoto Miyoshi |
| 7th Author's Affiliation | Nagoya Institute of Technology(Nagoya Inst. of Tech.) |
| Date | 2018-11-30 |
| Paper # | ED2018-41,CPM2018-75,LQE2018-95 |
| Volume (vol) | vol.118 |
| Number (no) | ED-330,CPM-331,LQE-332 |
| Page | pp.pp.41-44(ED), pp.41-44(CPM), pp.41-44(LQE), |
| #Pages | 4 |
| Date of Issue | 2018-11-22 (ED, CPM, LQE) |