Presentation 2018-11-15
A Ka-Band High Efficiency Doherty Power Amplifier MMIC using GaN-HEMT for 5G Application
Keigo Nakatani, Yutaro Yamaguchi, Yuji Komatsuzaki, Shintaro Shinjo,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English)
Keyword(in Japanese) (See Japanese page)
Keyword(in English)
Paper # MW2018-94
Date of Issue 2018-11-08 (MW)

Conference Information
Committee MW
Conference Date 2018/11/15(2days)
Place (in Japanese) (See Japanese page)
Place (in English) Fukue Cultural Hall
Topics (in Japanese) (See Japanese page)
Topics (in English) Microwave Technologies
Chair Masahiro Muraguchi(TUS)
Vice Chair Yoshinori Kogami(Utsunomiya Univ.) / Hiroshi Okazaki(NTT DOCOMO) / Kenichi Tajima(Mitsubishi Electric)
Secretary Yoshinori Kogami(HITACHI) / Hiroshi Okazaki(Utsunomiya Univ.) / Kenichi Tajima
Assistant Mizuki Motoyoshi(Tohoku Univ.) / Satoshi Yoshida(Kagoshima Univ.)

Paper Information
Registration To Technical Committee on Microwaves
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) A Ka-Band High Efficiency Doherty Power Amplifier MMIC using GaN-HEMT for 5G Application
Sub Title (in English)
Keyword(1)
1st Author's Name Keigo Nakatani
1st Author's Affiliation Mitsubishi Electric(Mitsubishi Electric)
2nd Author's Name Yutaro Yamaguchi
2nd Author's Affiliation Mitsubishi Electric(Mitsubishi Electric)
3rd Author's Name Yuji Komatsuzaki
3rd Author's Affiliation Mitsubishi Electric(Mitsubishi Electric)
4th Author's Name Shintaro Shinjo
4th Author's Affiliation Mitsubishi Electric(Mitsubishi Electric)
Date 2018-11-15
Paper # MW2018-94
Volume (vol) vol.118
Number (no) MW-308
Page pp.pp.13-18(MW),
#Pages 6
Date of Issue 2018-11-08 (MW)