| Presentation | 2018-11-30 A new method to evaluate the degree of potential fluctuation in InGaN quantum-well laser diodes by optical-pump stimulated-emission measurements Itsuki Oshima, Yuma Ikeda, Shigeta Sakai, A. A. Yamaguchi, Yuya Kanitani, Shigetaka Tomiya, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | It is well-known that the characteristics of InGaN quantum-well (QW) laser diodes are strongly affected by the potential fluctuation (alloy compositional fluctuation and/or well-width fluctuation) in the active layers. Various methods to evaluate the degree of the potential fluctuation, have been proposed so far, but the estimated values are sometimes different depending on the estimation method. In this study, we have theoretically investigated the effects of the potential fluctuation on the lasing characteristics and have found a new method to evaluate the degree of fluctuation from the temperature dependence of the lasing threshold excitation power density. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | InGaN quantum-well laser diodes / Potential fluctuation / Stimulated emission / Lasing threshold |
| Paper # | ED2018-49,CPM2018-83,LQE2018-103 |
| Date of Issue | 2018-11-22 (ED, CPM, LQE) |
| Conference Information | |
| Committee | ED / LQE / CPM |
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| Conference Date | 2018/11/29(2days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Nagoya Inst. tech. |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Nitride Semiconductor Devices, Materials, Related Technologies |
| Chair | Kunio Tsuda(Toshiba) / Kiichi Hamamoto(Kyusyu Univ.) / Fumihiko Hirose(Yamagata Univ.) |
| Vice Chair | Michihiko Suhara(TMU) / Hiroshi Aruga(Mitsubishi Electric) / Mayumi Takeyama(Kitami Inst. of Tech.) |
| Secretary | Michihiko Suhara(NICT) / Hiroshi Aruga(Saga Univ.) / Mayumi Takeyama(SEI) |
| Assistant | Tatsuya Iwata(TUT) / Junji Kotani(Fjitsu Lab.) / Masaya Nagai(Osaka Univ.) / Yasuo Kimura(Tokyo Univ. of Tech.) / Hideki Nakazawa(Hirosaki Univ.) / Tomoaki Terasako(Ehime Univ.) |
| Paper Information | |
| Registration To | Technical Committee on Electron Devices / Technical Committee on Lasers and Quantum Electronics / Technical Committee on Component Parts and Materials |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | A new method to evaluate the degree of potential fluctuation in InGaN quantum-well laser diodes by optical-pump stimulated-emission measurements |
| Sub Title (in English) | |
| Keyword(1) | InGaN quantum-well laser diodes |
| Keyword(2) | Potential fluctuation |
| Keyword(3) | Stimulated emission |
| Keyword(4) | Lasing threshold |
| 1st Author's Name | Itsuki Oshima |
| 1st Author's Affiliation | Kanazawa Institute of Technology(Kanazawa Inst. tec.) |
| 2nd Author's Name | Yuma Ikeda |
| 2nd Author's Affiliation | Kanazawa Institute of Technology(Kanazawa Inst. tec.) |
| 3rd Author's Name | Shigeta Sakai |
| 3rd Author's Affiliation | Kanazawa Institute of Technology(Kanazawa Inst. tec.) |
| 4th Author's Name | A. A. Yamaguchi |
| 4th Author's Affiliation | Kanazawa Institute of Technology(Kanazawa Inst. tec.) |
| 5th Author's Name | Yuya Kanitani |
| 5th Author's Affiliation | Sony Corporation(Sony) |
| 6th Author's Name | Shigetaka Tomiya |
| 6th Author's Affiliation | Sony Corporation(Sony) |
| Date | 2018-11-30 |
| Paper # | ED2018-49,CPM2018-83,LQE2018-103 |
| Volume (vol) | vol.118 |
| Number (no) | ED-330,CPM-331,LQE-332 |
| Page | pp.pp.79-82(ED), pp.79-82(CPM), pp.79-82(LQE), |
| #Pages | 4 |
| Date of Issue | 2018-11-22 (ED, CPM, LQE) |