| Presentation | 2018-11-09 [Invited Talk] Device Simulation of Field-Effect Transistor Using Ferroelectric Negative Capacitance Junichi Hattori, Tsutomu Ikegami, Koichi Fukuda, Hiroyuki Ota, Shinji Migita, Hidehiro Asai, |
|---|---|
| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | We consider the method to simulate negative-capacitance field-effect transistors (NC FETs) harnessing negative capacitance of a ferroelectric film used as a gate insulator and propose a method completely applicable to technology computer-aided design device simulators. In this method, the behavior of the polarization in ferroelectrics is described by a Landau-Khalatnikov equation and it can be solved simultaneously with the other equations governing NC FETs such as the Poisson equation and electron and hole current continuity equations. We simulate NC FETs using the method and show the possibility of their expected steep-slope switching. Also, owing to its high extensibility, the proposed method enables the device simulators to take into account a factor related to the domain structure formation in the polarization field of ferroelectrics. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | ferroelectrics / negative capacitance / field-effect transistors / device simulation / TCAD |
| Paper # | SDM2018-74 |
| Date of Issue | 2018-11-01 (SDM) |
| Conference Information | |
| Committee | SDM |
|---|---|
| Conference Date | 2018/11/8(2days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Kikai-Shinko-Kaikan Bldg. |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Process, Device, Circuit simulation, etc. |
| Chair | Takahiro Shinada(Tohoku Univ.) |
| Vice Chair | Hiroshige Hirano(TowerJazz Panasonic) |
| Secretary | Hiroshige Hirano(Shizuoka Univ.) |
| Assistant | Takahiro Mori(AIST) / Nobuaki Kobayashi(Nihon Univ.) |
| Paper Information | |
| Registration To | Technical Committee on Silicon Device and Materials |
|---|---|
| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | [Invited Talk] Device Simulation of Field-Effect Transistor Using Ferroelectric Negative Capacitance |
| Sub Title (in English) | |
| Keyword(1) | ferroelectrics |
| Keyword(2) | negative capacitance |
| Keyword(3) | field-effect transistors |
| Keyword(4) | device simulation |
| Keyword(5) | TCAD |
| 1st Author's Name | Junichi Hattori |
| 1st Author's Affiliation | AIST(AIST) |
| 2nd Author's Name | Tsutomu Ikegami |
| 2nd Author's Affiliation | AIST(AIST) |
| 3rd Author's Name | Koichi Fukuda |
| 3rd Author's Affiliation | AIST(AIST) |
| 4th Author's Name | Hiroyuki Ota |
| 4th Author's Affiliation | AIST(AIST) |
| 5th Author's Name | Shinji Migita |
| 5th Author's Affiliation | AIST(AIST) |
| 6th Author's Name | Hidehiro Asai |
| 6th Author's Affiliation | AIST(AIST) |
| Date | 2018-11-09 |
| Paper # | SDM2018-74 |
| Volume (vol) | vol.118 |
| Number (no) | SDM-291 |
| Page | pp.pp.47-52(SDM), |
| #Pages | 6 |
| Date of Issue | 2018-11-01 (SDM) |