講演名 | 2018-10-18 Thin film formation of ferroelectric undoped HfO2 on Si(100) by RF magnetron sputtering Min Gee Kim(東工大), Rengie Mark D. Mailig(東工大), Shun-ichiro Ohmi(東工大), |
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抄録(和) | In this study, we investigated thin film formation of ferroelectric undoped HfO2 directly deposited on p-Si(100). By post-deposition annealing at 600 oC/30 s in N2, the clockwise hysteresis was obtained in C-V characteristics for the film thicker than 15 nm with Al gate electrode. However, it was not obtained for the HfO2 thinner than 10 nm. On the other hand, the ferroelectricity was obtained even for 10-nm-thick HfO2 by post-metallization annealing with TiN capping layer. The memory window of 0.5 V was obtained by sweep range from -3 to 3 V. Therefore, adequate gate stack structure with annealing process would realize the thin ferroelectric HfO2 on Si(100) even for the undoped HfO2. |
抄録(英) | In this study, we investigated thin film formation of ferroelectric undoped HfO2 directly deposited on p-Si(100). By post-deposition annealing at 600 oC/30 s in N2, the clockwise hysteresis was obtained in C-V characteristics for the film thicker than 15 nm with Al gate electrode. However, it was not obtained for the HfO2 thinner than 10 nm. On the other hand, the ferroelectricity was obtained even for 10-nm-thick HfO2 by post-metallization annealing with TiN capping layer. The memory window of 0.5 V was obtained by sweep range from -3 to 3 V. Therefore, adequate gate stack structure with annealing process would realize the thin ferroelectric HfO2 on Si(100) even for the undoped HfO2. |
キーワード(和) | ferroelectric HfO2 / post-metallization annealing / RF magnetron sputtering |
キーワード(英) | ferroelectric HfO2 / post-metallization annealing / RF magnetron sputtering |
資料番号 | SDM2018-58 |
発行日 | 2018-10-10 (SDM) |
研究会情報 | |
研究会 | SDM |
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開催期間 | 2018/10/17(から2日開催) |
開催地(和) | 東北大学未来情報産業研究館5F |
開催地(英) | Niche, Tohoku Univ. |
テーマ(和) | プロセス科学と新プロセス技術 |
テーマ(英) | Process Science and New Process Technology |
委員長氏名(和) | 品田 高宏(東北大) |
委員長氏名(英) | Takahiro Shinada(Tohoku Univ.) |
副委員長氏名(和) | 平野 博茂(パナソニック・タワージャズ) |
副委員長氏名(英) | Hiroshige Hirano(TowerJazz Panasonic) |
幹事氏名(和) | 池田 浩也(静岡大) / 諸岡 哲(東芝メモリー) |
幹事氏名(英) | Hiroya Ikeda(Shizuoka Univ.) / Tetsu Morooka(TOSHIBA MEMORY) |
幹事補佐氏名(和) | 森 貴洋(産総研) / 小林 伸彰(日大) |
幹事補佐氏名(英) | Takahiro Mori(AIST) / Nobuaki Kobayashi(Nihon Univ.) |
講演論文情報詳細 | |
申込み研究会 | Technical Committee on Silicon Device and Materials |
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本文の言語 | ENG |
タイトル(和) | |
サブタイトル(和) | |
タイトル(英) | Thin film formation of ferroelectric undoped HfO2 on Si(100) by RF magnetron sputtering |
サブタイトル(和) | |
キーワード(1)(和/英) | ferroelectric HfO2 / ferroelectric HfO2 |
キーワード(2)(和/英) | post-metallization annealing / post-metallization annealing |
キーワード(3)(和/英) | RF magnetron sputtering / RF magnetron sputtering |
第 1 著者 氏名(和/英) | Min Gee Kim / Min Gee Kim |
第 1 著者 所属(和/英) | Tokyo Institute of Technology(略称:東工大) Tokyo Institute of Technology(略称:Tokyo Tech.) |
第 2 著者 氏名(和/英) | Rengie Mark D. Mailig / Rengie Mark D. Mailig |
第 2 著者 所属(和/英) | Tokyo Institute of Technology(略称:東工大) Tokyo Institute of Technology(略称:Tokyo Tech.) |
第 3 著者 氏名(和/英) | Shun-ichiro Ohmi / Shun-ichiro Ohmi |
第 3 著者 所属(和/英) | Tokyo Institute of Technology(略称:東工大) Tokyo Institute of Technology(略称:Tokyo Tech.) |
発表年月日 | 2018-10-18 |
資料番号 | SDM2018-58 |
巻番号(vol) | vol.118 |
号番号(no) | SDM-241 |
ページ範囲 | pp.31-34(SDM), |
ページ数 | 4 |
発行日 | 2018-10-10 (SDM) |