Presentation | 2018-10-04 Study on the diode modeling of GaN schottky barrier diodes for designing the rectifiers with large power input Takashi Hirakawa, Naoki Shinohara, |
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PDF Download Page | PDF download Page Link |
Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | |
Paper # | WPT2018-47 |
Date of Issue | 2018-09-26 (WPT) |
Conference Information | |
Committee | WPT / EE |
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Conference Date | 2018/10/3(2days) |
Place (in Japanese) | (See Japanese page) |
Place (in English) | Kyoto Univ. Uji Campus |
Topics (in Japanese) | (See Japanese page) |
Topics (in English) | Power conversion, Wireless power transfer, others |
Chair | Masaharu Takahashi(Chiba Univ.) / Tadatoshi Babasaki(NTT Facilities) |
Vice Chair | / Keiichi Hirose(NTT Facilities) / Tadashi Suetsugu(Fukuoka Univ.) |
Secretary | (Hokkaido Univ.) / Keiichi Hirose(Yamaguchi Univ.) / Tadashi Suetsugu(Sojo Univ.) |
Assistant | Masahiro Hanazawa(UL Japan) / Nozomi Haga(Gunma Univ.) / Takashi Matsushita(NTT-F) / Tetsuya Oshikata(ShinDengen) / Yuu Yonezawa(Fujitsu Lab.) |
Paper Information | |
Registration To | Technical Committee on Wireless Power Transfer / Technical Committee on Energy Engineering in Electronics and Communications |
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Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | Study on the diode modeling of GaN schottky barrier diodes for designing the rectifiers with large power input |
Sub Title (in English) | |
Keyword(1) | |
1st Author's Name | Takashi Hirakawa |
1st Author's Affiliation | Kyoto University(Kyoto Univ.) |
2nd Author's Name | Naoki Shinohara |
2nd Author's Affiliation | Kyoto University(Kyoto Univ.) |
Date | 2018-10-04 |
Paper # | WPT2018-47 |
Volume (vol) | vol.118 |
Number (no) | WPT-227 |
Page | pp.pp.97-100(WPT), |
#Pages | 4 |
Date of Issue | 2018-09-26 (WPT) |