Presentation 2018-10-04
Study on the diode modeling of GaN schottky barrier diodes for designing the rectifiers with large power input
Takashi Hirakawa, Naoki Shinohara,
PDF Download Page PDF download Page Link
Abstract(in Japanese) (See Japanese page)
Abstract(in English)
Keyword(in Japanese) (See Japanese page)
Keyword(in English)
Paper # WPT2018-47
Date of Issue 2018-09-26 (WPT)

Conference Information
Committee WPT / EE
Conference Date 2018/10/3(2days)
Place (in Japanese) (See Japanese page)
Place (in English) Kyoto Univ. Uji Campus
Topics (in Japanese) (See Japanese page)
Topics (in English) Power conversion, Wireless power transfer, others
Chair Masaharu Takahashi(Chiba Univ.) / Tadatoshi Babasaki(NTT Facilities)
Vice Chair / Keiichi Hirose(NTT Facilities) / Tadashi Suetsugu(Fukuoka Univ.)
Secretary (Hokkaido Univ.) / Keiichi Hirose(Yamaguchi Univ.) / Tadashi Suetsugu(Sojo Univ.)
Assistant Masahiro Hanazawa(UL Japan) / Nozomi Haga(Gunma Univ.) / Takashi Matsushita(NTT-F) / Tetsuya Oshikata(ShinDengen) / Yuu Yonezawa(Fujitsu Lab.)

Paper Information
Registration To Technical Committee on Wireless Power Transfer / Technical Committee on Energy Engineering in Electronics and Communications
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Study on the diode modeling of GaN schottky barrier diodes for designing the rectifiers with large power input
Sub Title (in English)
Keyword(1)
1st Author's Name Takashi Hirakawa
1st Author's Affiliation Kyoto University(Kyoto Univ.)
2nd Author's Name Naoki Shinohara
2nd Author's Affiliation Kyoto University(Kyoto Univ.)
Date 2018-10-04
Paper # WPT2018-47
Volume (vol) vol.118
Number (no) WPT-227
Page pp.pp.97-100(WPT),
#Pages 4
Date of Issue 2018-09-26 (WPT)