| Presentation | 2018-10-18 GaN HEMT Darlington Power Amplifier with Individual Bias Adjustment for High-Efficiency and Low-Distortion Characteristics Atsushi Kitamura, Yoichiro Takayama, Ryo Ishikawa, Kazuhiko Honjo, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Multi-transistor configurations are widely applied for improving the performance of transistor amplifiers. In the multi-transistor configuration, it is possible to cancel the nonlinearity of each transistor by adjusting the gate bias, so linearity can be improved. In this research, we have fabricated and evaluated an independent-bias-type GaN HEMT Darlington power amplifier to achieve both low distortion and high efficiency in a wide dynamic range of a power amplifier. By individually adjusting the gate bias voltages in the Darlington amplifier, a third order intermodulation distortion (IMD3) is suppressed. Moreover, by adjusting the drain bias voltages, a power added efficiency (PAE) was improved without affecting to IMD3. The fabricated GaN HEMT Darlington power amplifier exhibited a PAE of 36% and an IMD3 of $-$35,dBc with an output power of 30,dBm at 1.45,GHz. A high quality 64-QAM constellation has been retained for an output power range from 20 to 32,dBm. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Darlington / GaN HEMT / power amplifier / high efficiency / low distortion |
| Paper # | EMCJ2018-45,MW2018-81,EST2018-67 |
| Date of Issue | 2018-10-11 (EMCJ, MW, EST) |
| Conference Information | |
| Committee | EST / MW / EMCJ / IEE-EMC |
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| Conference Date | 2018/10/18(2days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Hachinohe Chamber of Commerce and Industry(Hachinohe city, Aomori) |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Simulation techniques, EMC, Microwave, Electromagnetic field simulation, etc. |
| Chair | Akimasa Hirata(Nagoya Inst. of Tech.) / Masahiro Muraguchi(TUS) / Osami Wada(Kyoto Univ.) / 山崎 健一(電中研) |
| Vice Chair | Shinichiro Ohnuki(Nihon Univ.) / Masayuki Kimishima(Advantest) / Jun Shibayama(Hosei Univ.) / Yoshinori Kogami(Utsunomiya Univ.) / Hiroshi Okazaki(NTT DOCOMO) / Kenichi Tajima(Mitsubishi Electric) / Kensei Oh(Nagoya Inst. of Tech.) |
| Secretary | Shinichiro Ohnuki(CIST) / Masayuki Kimishima(National Inst. of Tech.,Sendai College) / Jun Shibayama(HITACHI) / Yoshinori Kogami(Utsunomiya Univ.) / Hiroshi Okazaki(Tokyo Inst. of Tech.) / Kenichi Tajima(Mitsubishi Electric) / Kensei Oh(東北学院大) / (鉄道総研) |
| Assistant | Takahiro Ito(Nagoya Inst. of Tech.) / Kazuhiro Fujita(Fujitsu) / Mizuki Motoyoshi(Tohoku Univ.) / Satoshi Yoshida(Kagoshima Univ.) / Shinobu Nagasawa(Mitsubishi Electric) / Shinichiro Yamamoto(Univ. of Hyogo) / Takanori Unou(Denso) / 井渕 貴章(阪大) |
| Paper Information | |
| Registration To | Technical Committee on Electronics Simulation Technology / Technical Committee on Microwaves / Technical Committee on Electromagnetic Compatibility / Technical Meeting on Electromagnetic Compatibility (IEE-EMC) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | GaN HEMT Darlington Power Amplifier with Individual Bias Adjustment for High-Efficiency and Low-Distortion Characteristics |
| Sub Title (in English) | |
| Keyword(1) | Darlington |
| Keyword(2) | GaN HEMT |
| Keyword(3) | power amplifier |
| Keyword(4) | high efficiency |
| Keyword(5) | low distortion |
| 1st Author's Name | Atsushi Kitamura |
| 1st Author's Affiliation | The University of Electro-Communications(UEC) |
| 2nd Author's Name | Yoichiro Takayama |
| 2nd Author's Affiliation | The University of Electro-Communications(UEC) |
| 3rd Author's Name | Ryo Ishikawa |
| 3rd Author's Affiliation | The University of Electro-Communications(UEC) |
| 4th Author's Name | Kazuhiko Honjo |
| 4th Author's Affiliation | The University of Electro-Communications(UEC) |
| Date | 2018-10-18 |
| Paper # | EMCJ2018-45,MW2018-81,EST2018-67 |
| Volume (vol) | vol.118 |
| Number (no) | EMCJ-247,MW-248,EST-249 |
| Page | pp.pp.71-75(EMCJ), pp.71-75(MW), pp.71-75(EST), |
| #Pages | 5 |
| Date of Issue | 2018-10-11 (EMCJ, MW, EST) |