| Presentation | 2018-10-18 Large-signal Optical-Response Analysis of Voltage-Modulated 1.3 um Wavelength npn-AlGaInAs/InP Transistor Laser Yusei Goto, Shoichi Yoshitomi, Kentaro Yamanaka, Nobuhiko Nishiyama, Shigehisa Arai, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Transistor Laser (TL) has multiple modulation methods by a combination of terminal connection because it has three electrical terminals unlike the laser diodes. In this report, for the voltage modulation of the TL, the light output response under a large signal voltage modulation was simulated. By considering the transient change of the current in the active layer, we succeeded in reproducing the light output having transient change. Based on the simulation, the optimum collector-base capacitance in the actual device and the minimum required end-facet reflectance for high-speed modulation were obtained. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Transistor laser / Semiconductor laser / Voltage modulation / Large signal response |
| Paper # | OCS2018-34,OPE2018-70,LQE2018-59 |
| Date of Issue | 2018-10-11 (OCS, OPE, LQE) |
| Conference Information | |
| Committee | OPE / LQE / OCS |
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| Conference Date | 2018/10/18(2days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | Kouki Sato(Furukawa Electric Industries) / Kiichi Hamamoto(Kyusyu Univ.) / Itsuro Morita(KDDI Research) |
| Vice Chair | Hiroshi Takahashi(Sophia Univ.) / Hiroshi Aruga(Mitsubishi Electric) |
| Secretary | Hiroshi Takahashi(Univ. of Tokyo) / Hiroshi Aruga(NICT) / (SEI) |
| Assistant | Yuya Shoji(Tokyo Inst. of Tech.) / Kazunori Seno(NTT) / Masaya Nagai(Osaka Univ.) |
| Paper Information | |
| Registration To | Technical Committee on OptoElectronics / Technical Committee on Lasers and Quantum Electronics / Technical Committee on Optical Communication Systems |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Large-signal Optical-Response Analysis of Voltage-Modulated 1.3 um Wavelength npn-AlGaInAs/InP Transistor Laser |
| Sub Title (in English) | |
| Keyword(1) | Transistor laser |
| Keyword(2) | Semiconductor laser |
| Keyword(3) | Voltage modulation |
| Keyword(4) | Large signal response |
| 1st Author's Name | Yusei Goto |
| 1st Author's Affiliation | Tokyo Institute of Technology(Tokyo teach) |
| 2nd Author's Name | Shoichi Yoshitomi |
| 2nd Author's Affiliation | Tokyo Institute of Technology(Tokyo teach) |
| 3rd Author's Name | Kentaro Yamanaka |
| 3rd Author's Affiliation | Tokyo Institute of Technology(Tokyo teach) |
| 4th Author's Name | Nobuhiko Nishiyama |
| 4th Author's Affiliation | Tokyo Institute of Technology(Tokyo teach) |
| 5th Author's Name | Shigehisa Arai |
| 5th Author's Affiliation | Tokyo Institute of Technology(Tokyo teach) |
| Date | 2018-10-18 |
| Paper # | OCS2018-34,OPE2018-70,LQE2018-59 |
| Volume (vol) | vol.118 |
| Number (no) | OCS-251,OPE-252,LQE-253 |
| Page | pp.pp.35-40(OCS), pp.35-40(OPE), pp.35-40(LQE), |
| #Pages | 6 |
| Date of Issue | 2018-10-11 (OCS, OPE, LQE) |