Presentation | 2018-08-08 [Invited Talk] Research Progress on Resistance Change Device Based on Oxide Materials Hisashi Shima, Makoto Takahashi, Yasuhisa Naitoh, Hiroyuki Akinaga, |
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PDF Download Page | PDF download Page Link |
Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | |
Paper # | SDM2018-36,ICD2018-23 |
Date of Issue | 2018-07-31 (SDM, ICD) |
Conference Information | |
Committee | SDM / ICD / ITE-IST |
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Conference Date | 2018/8/7(3days) |
Place (in Japanese) | (See Japanese page) |
Place (in English) | Hokkaido Univ., Graduate School of IST M Bldg., M151 |
Topics (in Japanese) | (See Japanese page) |
Topics (in English) | Analog, Mixed Analog and Digital, RF, and Sensor Interface, Low Voltage/Low Power Techniques, Novel Devices/Circuits, and the Applications |
Chair | Takahiro Shinada(Tohoku Univ.) / Hideto Hidaka(Renesas) / Takayuki Hamamoto(Tokyo University of Science) |
Vice Chair | Hiroshige Hirano(TowerJazz Panasonic) / Makoto Nagata(Kobe Univ.) / Hiroshi Ohtake(NHK) / Junichi Akita(Kanazawa Univ.) |
Secretary | Hiroshige Hirano(Shizuoka Univ.) / Makoto Nagata(TOSHIBA MEMORY) / Hiroshi Ohtake(Panasonic) / Junichi Akita(Tohoku Univ.) |
Assistant | Takahiro Mori(AIST) / Nobuaki Kobayashi(Nihon Univ.) / Hiroyuki Ito(Tokyo Inst. of Tech.) / Masatoshi Tsuge(Socionext) / Tetsuya Hirose(Kobe Univ.) |
Paper Information | |
Registration To | Technical Committee on Silicon Device and Materials / Technical Committee on Integrated Circuits and Devices / Technical Group on Information Sensing Technologies |
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Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | [Invited Talk] Research Progress on Resistance Change Device Based on Oxide Materials |
Sub Title (in English) | Application for Non-volatile Memory and Neuromorphic Device |
Keyword(1) | |
1st Author's Name | Hisashi Shima |
1st Author's Affiliation | National Institute of Advanced Industrial Science and Technology(AIST) |
2nd Author's Name | Makoto Takahashi |
2nd Author's Affiliation | National Institute of Advanced Industrial Science and Technology(AIST) |
3rd Author's Name | Yasuhisa Naitoh |
3rd Author's Affiliation | National Institute of Advanced Industrial Science and Technology(AIST) |
4th Author's Name | Hiroyuki Akinaga |
4th Author's Affiliation | National Institute of Advanced Industrial Science and Technology(AIST) |
Date | 2018-08-08 |
Paper # | SDM2018-36,ICD2018-23 |
Volume (vol) | vol.118 |
Number (no) | SDM-172,ICD-173 |
Page | pp.pp.59-64(SDM), pp.59-64(ICD), |
#Pages | 6 |
Date of Issue | 2018-07-31 (SDM, ICD) |