Presentation 2018-07-13
Ultra-high bandwidth InP modulator co-assembled with high-speed electronics
Yoshihiro Ogiso, Josuke Ozaki, Shinsuke Nakano, Yuta Ueda, Hitoshi Wakita,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English) We developed an ultra-high bandwidth and a low drive voltage (1.5V Vπ) InP-based optical modulator by employing both a novel heterostructure and a capacitance-loaded traveling-wave electrode. In this work, we first report up to 128-Gbaud IQ modulations (without optical pre-equalization) by co-assembling the high-speed modulator and driver IC.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) Modulators / InP / Mach-Zehnder / IQ modulation
Paper # LQE2018-35
Date of Issue 2018-07-05 (LQE)

Conference Information
Committee LQE
Conference Date 2018/7/12(2days)
Place (in Japanese) (See Japanese page)
Place (in English)
Topics (in Japanese) (See Japanese page)
Topics (in English)
Chair Kiichi Hamamoto(Kyusyu Univ.)
Vice Chair Hiroshi Aruga(Mitsubishi Electric)
Secretary Hiroshi Aruga(SEI)
Assistant Masaya Nagai(Osaka Univ.)

Paper Information
Registration To Technical Committee on Lasers and Quantum Electronics
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Ultra-high bandwidth InP modulator co-assembled with high-speed electronics
Sub Title (in English)
Keyword(1) Modulators
Keyword(2) InP
Keyword(3) Mach-Zehnder
Keyword(4) IQ modulation
1st Author's Name Yoshihiro Ogiso
1st Author's Affiliation NTT corporation(NTT)
2nd Author's Name Josuke Ozaki
2nd Author's Affiliation NTT corporation(NTT)
3rd Author's Name Shinsuke Nakano
3rd Author's Affiliation NTT corporation(NTT)
4th Author's Name Yuta Ueda
4th Author's Affiliation NTT corporation(NTT)
5th Author's Name Hitoshi Wakita
5th Author's Affiliation NTT corporation(NTT)
Date 2018-07-13
Paper # LQE2018-35
Volume (vol) vol.118
Number (no) LQE-129
Page pp.pp.61-64(LQE),
#Pages 4
Date of Issue 2018-07-05 (LQE)