| Presentation | 2018-07-12 Reduction of threading dislocations and antiphase domains in MOVPE-grown GaAs on Si(100) Ryo Nakao, Tomonari Sato, Hiroki Sugiyama, Shinji Matsuo, |
|---|---|
| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | |
| Paper # | LQE2018-22 |
| Date of Issue | 2018-07-05 (LQE) |
| Conference Information | |
| Committee | LQE |
|---|---|
| Conference Date | 2018/7/12(2days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | Kiichi Hamamoto(Kyusyu Univ.) |
| Vice Chair | Hiroshi Aruga(Mitsubishi Electric) |
| Secretary | Hiroshi Aruga(SEI) |
| Assistant | Masaya Nagai(Osaka Univ.) |
| Paper Information | |
| Registration To | Technical Committee on Lasers and Quantum Electronics |
|---|---|
| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Reduction of threading dislocations and antiphase domains in MOVPE-grown GaAs on Si(100) |
| Sub Title (in English) | |
| Keyword(1) | |
| 1st Author's Name | Ryo Nakao |
| 1st Author's Affiliation | NTT Corporation(NTT) |
| 2nd Author's Name | Tomonari Sato |
| 2nd Author's Affiliation | NTT Corporation(NTT) |
| 3rd Author's Name | Hiroki Sugiyama |
| 3rd Author's Affiliation | NTT Corporation(NTT) |
| 4th Author's Name | Shinji Matsuo |
| 4th Author's Affiliation | NTT Corporation(NTT) |
| Date | 2018-07-12 |
| Paper # | LQE2018-22 |
| Volume (vol) | vol.118 |
| Number (no) | LQE-129 |
| Page | pp.pp.9-12(LQE), |
| #Pages | 4 |
| Date of Issue | 2018-07-05 (LQE) |