Presentation 2018-06-25
[Invited Lecture] Progress in Diamond Field Effect Transistors
Hiroshi Kawarada, Nobutaka Oi, Bi Te, Shoichiro Imanishi, Masayuki Iwatakaki, Taichi Yabe, Atsushi Hiraiwa,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English) 2 dimensional hole gas at diamond and insulator interface is used for field effect transistor (FET). High voltage (~2000 V) and high frequency FETs have been developed. The present status of vertical FET, normally-off, low on-resistance and complementary inverter are discussed.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) Diamond / Field Effect Transistor / 2 dimensional hole gas / High frequency / High voltage
Paper # SDM2018-21
Date of Issue 2018-06-18 (SDM)

Conference Information
Committee SDM
Conference Date 2018/6/25(1days)
Place (in Japanese) (See Japanese page)
Place (in English) Nagoya Univ. VBL3F
Topics (in Japanese) (See Japanese page)
Topics (in English) Material Science and Process Technology for MOS Devices and Memories
Chair Takahiro Shinada(Tohoku Univ.)
Vice Chair Hiroshige Hirano(TowerJazz Panasonic)
Secretary Hiroshige Hirano(Shizuoka Univ.)
Assistant Takahiro Mori(AIST) / Nobuaki Kobayashi(Nihon Univ.)

Paper Information
Registration To Technical Committee on Silicon Device and Materials
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) [Invited Lecture] Progress in Diamond Field Effect Transistors
Sub Title (in English)
Keyword(1) Diamond
Keyword(2) Field Effect Transistor
Keyword(3) 2 dimensional hole gas
Keyword(4) High frequency
Keyword(5) High voltage
1st Author's Name Hiroshi Kawarada
1st Author's Affiliation Waseda University(Waseda Univ.)
2nd Author's Name Nobutaka Oi
2nd Author's Affiliation Waseda University(Waseda Univ.)
3rd Author's Name Bi Te
3rd Author's Affiliation Waseda University(Waseda Univ.)
4th Author's Name Shoichiro Imanishi
4th Author's Affiliation Waseda University(Waseda Univ.)
5th Author's Name Masayuki Iwatakaki
5th Author's Affiliation Waseda University(Waseda Univ.)
6th Author's Name Taichi Yabe
6th Author's Affiliation Waseda University(Waseda Univ.)
7th Author's Name Atsushi Hiraiwa
7th Author's Affiliation Waseda University(Waseda Univ.)
Date 2018-06-25
Paper # SDM2018-21
Volume (vol) vol.118
Number (no) SDM-110
Page pp.pp.23-28(SDM),
#Pages 6
Date of Issue 2018-06-18 (SDM)