| Presentation | 2018-06-25 [Invited Lecture] Inversion channel diamond MOSFET Tsubasa Matsumoto, Hiromitsu Kato, Toshiharu Makino, Masahiko Ogura, Daisuke Takeuchi, Takao Inokuma, Satoshi Yamasaki, Norio Tokuda, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | We fabricated inversion channel diamond MOSFET with normally off characteristics. The diamond MOSFET with the inversion channel had not been reported until we reported the MOSFET, because diamond do not have a native oxide such as SiO2 in the Si MOSFET. The success was obtained by a high quality diamond MOS interface using a light phosphorus doping technique and a wet annealing technique for OH termination. In this report, we will discuss diamond as a material of MOSFET, the effects of the wet annealing technique in diamond MOS interface, and current status and issues of the diamond MOSFET. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | diamond / MOSFET / interface state / inversion |
| Paper # | SDM2018-20 |
| Date of Issue | 2018-06-18 (SDM) |
| Conference Information | |
| Committee | SDM |
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| Conference Date | 2018/6/25(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Nagoya Univ. VBL3F |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Material Science and Process Technology for MOS Devices and Memories |
| Chair | Takahiro Shinada(Tohoku Univ.) |
| Vice Chair | Hiroshige Hirano(TowerJazz Panasonic) |
| Secretary | Hiroshige Hirano(Shizuoka Univ.) |
| Assistant | Takahiro Mori(AIST) / Nobuaki Kobayashi(Nihon Univ.) |
| Paper Information | |
| Registration To | Technical Committee on Silicon Device and Materials |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | [Invited Lecture] Inversion channel diamond MOSFET |
| Sub Title (in English) | Formation of diamond MOS interface by wet annealing |
| Keyword(1) | diamond |
| Keyword(2) | MOSFET |
| Keyword(3) | interface state |
| Keyword(4) | inversion |
| 1st Author's Name | Tsubasa Matsumoto |
| 1st Author's Affiliation | Kanazawa University(Kanazawa Univ.) |
| 2nd Author's Name | Hiromitsu Kato |
| 2nd Author's Affiliation | National Institute of Advanced Industrial Science and Technology(AIST) |
| 3rd Author's Name | Toshiharu Makino |
| 3rd Author's Affiliation | National Institute of Advanced Industrial Science and Technology(AIST) |
| 4th Author's Name | Masahiko Ogura |
| 4th Author's Affiliation | National Institute of Advanced Industrial Science and Technology(AIST) |
| 5th Author's Name | Daisuke Takeuchi |
| 5th Author's Affiliation | National Institute of Advanced Industrial Science and Technology(AIST) |
| 6th Author's Name | Takao Inokuma |
| 6th Author's Affiliation | Kanazawa University(Kanazawa Univ.) |
| 7th Author's Name | Satoshi Yamasaki |
| 7th Author's Affiliation | National Institute of Advanced Industrial Science and Technology(AIST) |
| 8th Author's Name | Norio Tokuda |
| 8th Author's Affiliation | Kanazawa University(Kanazawa Univ.) |
| Date | 2018-06-25 |
| Paper # | SDM2018-20 |
| Volume (vol) | vol.118 |
| Number (no) | SDM-110 |
| Page | pp.pp.19-22(SDM), |
| #Pages | 4 |
| Date of Issue | 2018-06-18 (SDM) |