| Presentation | 2018-06-25 Control of SiO2/GaN Interface for High-performance GaN MOSFET Tauji Hosoi, Takahiro Yamada, Mikito Nozaki, Tokio Takahashi, Hisashi Yamada, Mitsuaki Shimizu, Akitaka Yoshigoe, Takayoshi Shimura, Heiji Watanabe, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | A high-quality gate insulator together with low interface states is indispensable for GaN-based power MOSFETs. We have recently reported low interface state density of GaOx/GaN structures formed by thermal oxidation or sputter deposition, while surface morphology of GaOx layer was concerned. In this work, plasma-enhanced CVD-deposition of SiO2 films on GaN surface forming GaOx interlayers was carried out. Although the fabricated SiO2/GaOx/GaN structures with post-deposition annealing exhibited low interface state densities, Ga diffusion into SiO2 layers severely degraded the insulating properties. We also demonstrated that the PDA based on rapid thermal processing is beneficial in suppressing Ga diffusion, leading to high-quality interface together with superior insulating property. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | GaN / SiO2 / MOS devices / interface / reliability |
| Paper # | SDM2018-18 |
| Date of Issue | 2018-06-18 (SDM) |
| Conference Information | |
| Committee | SDM |
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| Conference Date | 2018/6/25(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Nagoya Univ. VBL3F |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Material Science and Process Technology for MOS Devices and Memories |
| Chair | Takahiro Shinada(Tohoku Univ.) |
| Vice Chair | Hiroshige Hirano(TowerJazz Panasonic) |
| Secretary | Hiroshige Hirano(Shizuoka Univ.) |
| Assistant | Takahiro Mori(AIST) / Nobuaki Kobayashi(Nihon Univ.) |
| Paper Information | |
| Registration To | Technical Committee on Silicon Device and Materials |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Control of SiO2/GaN Interface for High-performance GaN MOSFET |
| Sub Title (in English) | |
| Keyword(1) | GaN |
| Keyword(2) | SiO2 |
| Keyword(3) | MOS devices |
| Keyword(4) | interface |
| Keyword(5) | reliability |
| 1st Author's Name | Tauji Hosoi |
| 1st Author's Affiliation | Osaka Unviersity(Osaka Univ.) |
| 2nd Author's Name | Takahiro Yamada |
| 2nd Author's Affiliation | Osaka Unviersity(Osaka Univ.) |
| 3rd Author's Name | Mikito Nozaki |
| 3rd Author's Affiliation | Osaka Unviersity(Osaka Univ.) |
| 4th Author's Name | Tokio Takahashi |
| 4th Author's Affiliation | National Institute of Advanced Industrial Science and Technology(AIST) |
| 5th Author's Name | Hisashi Yamada |
| 5th Author's Affiliation | National Institute of Advanced Industrial Science and Technology(AIST) |
| 6th Author's Name | Mitsuaki Shimizu |
| 6th Author's Affiliation | National Institute of Advanced Industrial Science and Technology(AIST) |
| 7th Author's Name | Akitaka Yoshigoe |
| 7th Author's Affiliation | Japan Atomic Energy Agency(JAEA) |
| 8th Author's Name | Takayoshi Shimura |
| 8th Author's Affiliation | Osaka Unviersity(Osaka Univ.) |
| 9th Author's Name | Heiji Watanabe |
| 9th Author's Affiliation | Osaka Unviersity(Osaka Univ.) |
| Date | 2018-06-25 |
| Paper # | SDM2018-18 |
| Volume (vol) | vol.118 |
| Number (no) | SDM-110 |
| Page | pp.pp.11-14(SDM), |
| #Pages | 4 |
| Date of Issue | 2018-06-18 (SDM) |