| Presentation | 2018-06-25 Influence of native oxide layer on electrical characteristics of Al2O3/n-GaN capacitors Kazuya Yuge, Toshihide Nabatame, Yoshihiro Yoshikawa, Akihiko Ohi, Naoki Ikeda, Liwen Sang, Yasuo Koide, Tomoji Ohishi, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | In this study, the effects of the native oxide interfacial layer (Ga$_2$O$_3$) on the fixed charge and dipole formation of Al$_2$O$_3$/n-GaN MOS capacitors were investigated. As-grown Al$_2$O$_3$/Ga$_2$O$_3$/n-GaN MOS capacitor shows a small flat band voltage ($V_{fb}$) shift of about 30 mV and a large frequency dispersion, suggesting that the initial growth of the Al$_2$O$_3$ resulted in the formation of electrical defects at the Al$_2$O$_3$/n-GaN interface. This $V_{fb}$ shift and frequency dispersion are greatly improved at 300°C by post-annealing (PMA). The positive fixed charge values ($Q_{IL}$) estimated from the relationships between capacitance equivalent thickness and $V_{fb}$ were +5.8×10$^{12}$ cm$^{-2}$ and +4.1×10$^{11}$ cm$^{-2}$ for as-grown and PMA-processed capacitors, respectively. The interface state density ($D_{it}$) determined using a conductance method was also significantly reduced by an order of magnitude after PMA processing at 300 °C. These trends in the $Q_{IL}$ and $D_{it}$ were observed regardless of the presence of a Ga$_2$O$_3$, indicating that this interlayer does not greatly affect fixed charge generation at the Al$_2$O$_3$/Ga$_2$O$_3$ and Ga$_2$O$_3$/GaN interfaces. In addition, due to the formation of Al$_2$O$_3$/SiO$_2$ interface dipole, it has been reported that the Pt / Al$_2$O$_3$/SiO$_2$/Si MOS capacitor has Vfb shift of +0.6 V dipole. In contrast, no dipole formation was observed at the Al$_2$O$_3$/Ga$_2$O$_3$ interface in the Pt/Al$_2$O$_3$/Ga$_2$O$_3$/n-GaN MOS capacitor.This result is attributed to the ionic/ionic hetero-interface in the latter case, which occurs because of the ionic character of the Ga-O bonds in Ga$_2$O$_3$. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | GaN / Al2O3 / Ga2O3 / Atomic layer deposition / Dipole / Fixed charge |
| Paper # | SDM2018-19 |
| Date of Issue | 2018-06-18 (SDM) |
| Conference Information | |
| Committee | SDM |
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| Conference Date | 2018/6/25(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Nagoya Univ. VBL3F |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Material Science and Process Technology for MOS Devices and Memories |
| Chair | Takahiro Shinada(Tohoku Univ.) |
| Vice Chair | Hiroshige Hirano(TowerJazz Panasonic) |
| Secretary | Hiroshige Hirano(Shizuoka Univ.) |
| Assistant | Takahiro Mori(AIST) / Nobuaki Kobayashi(Nihon Univ.) |
| Paper Information | |
| Registration To | Technical Committee on Silicon Device and Materials |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Influence of native oxide layer on electrical characteristics of Al2O3/n-GaN capacitors |
| Sub Title (in English) | |
| Keyword(1) | GaN |
| Keyword(2) | Al2O3 |
| Keyword(3) | Ga2O3 |
| Keyword(4) | Atomic layer deposition |
| Keyword(5) | Dipole |
| Keyword(6) | Fixed charge |
| 1st Author's Name | Kazuya Yuge |
| 1st Author's Affiliation | Shibaura Institute of Technology(SIT) |
| 2nd Author's Name | Toshihide Nabatame |
| 2nd Author's Affiliation | National Institute of Material Science(NIMS) |
| 3rd Author's Name | Yoshihiro Yoshikawa |
| 3rd Author's Affiliation | National Institute of Material Science(NIMS) |
| 4th Author's Name | Akihiko Ohi |
| 4th Author's Affiliation | National Institute of Material Science(NIMS) |
| 5th Author's Name | Naoki Ikeda |
| 5th Author's Affiliation | National Institute of Material Science(NIMS) |
| 6th Author's Name | Liwen Sang |
| 6th Author's Affiliation | National Institute of Material Science(NIMS) |
| 7th Author's Name | Yasuo Koide |
| 7th Author's Affiliation | National Institute of Material Science(NIMS) |
| 8th Author's Name | Tomoji Ohishi |
| 8th Author's Affiliation | Shibaura Institute of Technology(SIT) |
| Date | 2018-06-25 |
| Paper # | SDM2018-19 |
| Volume (vol) | vol.118 |
| Number (no) | SDM-110 |
| Page | pp.pp.15-18(SDM), |
| #Pages | 4 |
| Date of Issue | 2018-06-18 (SDM) |