Presentation | 2018-06-25 XPS Study of Silicate Formation and Electrical Dipole at Y2O3/SiO2 Interfaces Nobuyuki Fujimura, Akio Ohta, Mitsuhisa Ikeda, Katsunori Makihara, Seiichi Miyazaki, |
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PDF Download Page | PDF download Page Link |
Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | |
Paper # | SDM2018-26 |
Date of Issue | 2018-06-18 (SDM) |
Conference Information | |
Committee | SDM |
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Conference Date | 2018/6/25(1days) |
Place (in Japanese) | (See Japanese page) |
Place (in English) | Nagoya Univ. VBL3F |
Topics (in Japanese) | (See Japanese page) |
Topics (in English) | Material Science and Process Technology for MOS Devices and Memories |
Chair | Takahiro Shinada(Tohoku Univ.) |
Vice Chair | Hiroshige Hirano(TowerJazz Panasonic) |
Secretary | Hiroshige Hirano(Shizuoka Univ.) |
Assistant | Takahiro Mori(AIST) / Nobuaki Kobayashi(Nihon Univ.) |
Paper Information | |
Registration To | Technical Committee on Silicon Device and Materials |
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Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | XPS Study of Silicate Formation and Electrical Dipole at Y2O3/SiO2 Interfaces |
Sub Title (in English) | |
Keyword(1) | |
1st Author's Name | Nobuyuki Fujimura |
1st Author's Affiliation | Nagoya University(Nagoya Univ.) |
2nd Author's Name | Akio Ohta |
2nd Author's Affiliation | Nagoya University(Nagoya Univ.) |
3rd Author's Name | Mitsuhisa Ikeda |
3rd Author's Affiliation | Nagoya University(Nagoya Univ.) |
4th Author's Name | Katsunori Makihara |
4th Author's Affiliation | Nagoya University(Nagoya Univ.) |
5th Author's Name | Seiichi Miyazaki |
5th Author's Affiliation | Nagoya University(Nagoya Univ.) |
Date | 2018-06-25 |
Paper # | SDM2018-26 |
Volume (vol) | vol.118 |
Number (no) | SDM-110 |
Page | pp.pp.47-51(SDM), |
#Pages | 5 |
Date of Issue | 2018-06-18 (SDM) |