| Presentation | 2018-06-25 Chemical Bonding Features and Thermal Stability at SiO2/GaN interfaces Formed by Remote O2 Plasma Enhanced CVD Ryohei Matsuda, Akio Ohta, Noriyuki Taoka, Mitsuhisa Ikeda, Katsunori Makihara, Mitsuaki Shimizu, Seiichi Miyazaki, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | A ~6.2 nm-thick SiO2 was deposited on n-type GaN(0001) by the remote O2 plasma enhanced CVD, and chemical bonding features and filled defect states of SiO2/GaN structure were studied by x-ray photoelectron spectroscopy (XPS) and total photoelectron yield spectroscopy (PYS), respectively. And, post deposition anneal (PDA) was performed in XPS/PYS system without air exposure to evaluate the thermal stability of SiO2/GaN structure. Chemical structure at SiO2/GaN interface was found to be thermally stable against PDA at temperatures up to 600C. With increasing PDA temperatures over 700C, diffusion and incorporation of Ga atoms into SiO2 were detected. And, it was found that PDA at temperatures over 600C was effective to decrease the filled gap states in the region near the SiO2/GaN interface. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | GaN / SiO2 / Remote O2 Plasma Enhanced CVD / Thermal Stability |
| Paper # | SDM2018-22 |
| Date of Issue | 2018-06-18 (SDM) |
| Conference Information | |
| Committee | SDM |
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| Conference Date | 2018/6/25(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Nagoya Univ. VBL3F |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Material Science and Process Technology for MOS Devices and Memories |
| Chair | Takahiro Shinada(Tohoku Univ.) |
| Vice Chair | Hiroshige Hirano(TowerJazz Panasonic) |
| Secretary | Hiroshige Hirano(Shizuoka Univ.) |
| Assistant | Takahiro Mori(AIST) / Nobuaki Kobayashi(Nihon Univ.) |
| Paper Information | |
| Registration To | Technical Committee on Silicon Device and Materials |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Chemical Bonding Features and Thermal Stability at SiO2/GaN interfaces Formed by Remote O2 Plasma Enhanced CVD |
| Sub Title (in English) | |
| Keyword(1) | GaN |
| Keyword(2) | SiO2 |
| Keyword(3) | Remote O2 Plasma Enhanced CVD |
| Keyword(4) | Thermal Stability |
| 1st Author's Name | Ryohei Matsuda |
| 1st Author's Affiliation | Nagoya University(Nagoya Univ.) |
| 2nd Author's Name | Akio Ohta |
| 2nd Author's Affiliation | Nagoya University(Nagoya Univ.) |
| 3rd Author's Name | Noriyuki Taoka |
| 3rd Author's Affiliation | National Institute of Advanced Industrial Science and Technology(AIST) |
| 4th Author's Name | Mitsuhisa Ikeda |
| 4th Author's Affiliation | Nagoya University(Nagoya Univ.) |
| 5th Author's Name | Katsunori Makihara |
| 5th Author's Affiliation | Nagoya University(Nagoya Univ.) |
| 6th Author's Name | Mitsuaki Shimizu |
| 6th Author's Affiliation | National Institute of Advanced Industrial Science and Technology(AIST) |
| 7th Author's Name | Seiichi Miyazaki |
| 7th Author's Affiliation | Nagoya University(Nagoya Univ.) |
| Date | 2018-06-25 |
| Paper # | SDM2018-22 |
| Volume (vol) | vol.118 |
| Number (no) | SDM-110 |
| Page | pp.pp.29-32(SDM), |
| #Pages | 4 |
| Date of Issue | 2018-06-18 (SDM) |