Presentation 2018-06-25
Concern of Ferroelectric HfO2 Films Brought by Large Coercive Field
Shinji Migita, Hiroyuki Ota, Akira Toriumi,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English) Ferroelectric HfO2-based thin films are attractive memory materials for application in LSI. These ferroelectrics have large coercive fields, 10 times larger than those of conventional ferroelectric materials. The large coercive field is advantageous for the attainment of a large memory window in ultrathin films. In another sense, however, the applied electric field for memory operation becomes close to the breakdown electric field of the film. Therefore it is important to secure robust memory properties during the cyclic voltage application.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) HfO2 / Hf-Zr-O / ferroelectric / metastable phase / endurance / coercive field / dielectric breakdown
Paper # SDM2018-25
Date of Issue 2018-06-18 (SDM)

Conference Information
Committee SDM
Conference Date 2018/6/25(1days)
Place (in Japanese) (See Japanese page)
Place (in English) Nagoya Univ. VBL3F
Topics (in Japanese) (See Japanese page)
Topics (in English) Material Science and Process Technology for MOS Devices and Memories
Chair Takahiro Shinada(Tohoku Univ.)
Vice Chair Hiroshige Hirano(TowerJazz Panasonic)
Secretary Hiroshige Hirano(Shizuoka Univ.)
Assistant Takahiro Mori(AIST) / Nobuaki Kobayashi(Nihon Univ.)

Paper Information
Registration To Technical Committee on Silicon Device and Materials
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Concern of Ferroelectric HfO2 Films Brought by Large Coercive Field
Sub Title (in English)
Keyword(1) HfO2
Keyword(2) Hf-Zr-O
Keyword(3) ferroelectric
Keyword(4) metastable phase
Keyword(5) endurance
Keyword(6) coercive field
Keyword(7) dielectric breakdown
1st Author's Name Shinji Migita
1st Author's Affiliation National Institute of Advanced Industrial Science and Technology(AIST)
2nd Author's Name Hiroyuki Ota
2nd Author's Affiliation National Institute of Advanced Industrial Science and Technology(AIST)
3rd Author's Name Akira Toriumi
3rd Author's Affiliation The University of Tokyo(Univ. Tokyo)
Date 2018-06-25
Paper # SDM2018-25
Volume (vol) vol.118
Number (no) SDM-110
Page pp.pp.43-46(SDM),
#Pages 4
Date of Issue 2018-06-18 (SDM)