Presentation | 2018-06-25 Concern of Ferroelectric HfO2 Films Brought by Large Coercive Field Shinji Migita, Hiroyuki Ota, Akira Toriumi, |
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PDF Download Page | PDF download Page Link |
Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | Ferroelectric HfO2-based thin films are attractive memory materials for application in LSI. These ferroelectrics have large coercive fields, 10 times larger than those of conventional ferroelectric materials. The large coercive field is advantageous for the attainment of a large memory window in ultrathin films. In another sense, however, the applied electric field for memory operation becomes close to the breakdown electric field of the film. Therefore it is important to secure robust memory properties during the cyclic voltage application. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | HfO2 / Hf-Zr-O / ferroelectric / metastable phase / endurance / coercive field / dielectric breakdown |
Paper # | SDM2018-25 |
Date of Issue | 2018-06-18 (SDM) |
Conference Information | |
Committee | SDM |
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Conference Date | 2018/6/25(1days) |
Place (in Japanese) | (See Japanese page) |
Place (in English) | Nagoya Univ. VBL3F |
Topics (in Japanese) | (See Japanese page) |
Topics (in English) | Material Science and Process Technology for MOS Devices and Memories |
Chair | Takahiro Shinada(Tohoku Univ.) |
Vice Chair | Hiroshige Hirano(TowerJazz Panasonic) |
Secretary | Hiroshige Hirano(Shizuoka Univ.) |
Assistant | Takahiro Mori(AIST) / Nobuaki Kobayashi(Nihon Univ.) |
Paper Information | |
Registration To | Technical Committee on Silicon Device and Materials |
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Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | Concern of Ferroelectric HfO2 Films Brought by Large Coercive Field |
Sub Title (in English) | |
Keyword(1) | HfO2 |
Keyword(2) | Hf-Zr-O |
Keyword(3) | ferroelectric |
Keyword(4) | metastable phase |
Keyword(5) | endurance |
Keyword(6) | coercive field |
Keyword(7) | dielectric breakdown |
1st Author's Name | Shinji Migita |
1st Author's Affiliation | National Institute of Advanced Industrial Science and Technology(AIST) |
2nd Author's Name | Hiroyuki Ota |
2nd Author's Affiliation | National Institute of Advanced Industrial Science and Technology(AIST) |
3rd Author's Name | Akira Toriumi |
3rd Author's Affiliation | The University of Tokyo(Univ. Tokyo) |
Date | 2018-06-25 |
Paper # | SDM2018-25 |
Volume (vol) | vol.118 |
Number (no) | SDM-110 |
Page | pp.pp.43-46(SDM), |
#Pages | 4 |
Date of Issue | 2018-06-18 (SDM) |