| Presentation | 2018-06-25 First principle investigation of superlattice GeTe/Sb2Te3 phase change Hiroaki Nohara, Hiroki Shirakawa, Masaaki Araidai, Kenji Shiraishi, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | |
| Paper # | SDM2018-24 |
| Date of Issue | 2018-06-18 (SDM) |
| Conference Information | |
| Committee | SDM |
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| Conference Date | 2018/6/25(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Nagoya Univ. VBL3F |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Material Science and Process Technology for MOS Devices and Memories |
| Chair | Takahiro Shinada(Tohoku Univ.) |
| Vice Chair | Hiroshige Hirano(TowerJazz Panasonic) |
| Secretary | Hiroshige Hirano(Shizuoka Univ.) |
| Assistant | Takahiro Mori(AIST) / Nobuaki Kobayashi(Nihon Univ.) |
| Paper Information | |
| Registration To | Technical Committee on Silicon Device and Materials |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | First principle investigation of superlattice GeTe/Sb2Te3 phase change |
| Sub Title (in English) | |
| Keyword(1) | |
| 1st Author's Name | Hiroaki Nohara |
| 1st Author's Affiliation | Nagoya University(Nagoya Univ.) |
| 2nd Author's Name | Hiroki Shirakawa |
| 2nd Author's Affiliation | Nagoya University(Nagoya Univ.) |
| 3rd Author's Name | Masaaki Araidai |
| 3rd Author's Affiliation | Nagoya University(Nagoya Univ.) |
| 4th Author's Name | Kenji Shiraishi |
| 4th Author's Affiliation | Nagoya University(Nagoya Univ.) |
| Date | 2018-06-25 |
| Paper # | SDM2018-24 |
| Volume (vol) | vol.118 |
| Number (no) | SDM-110 |
| Page | pp.pp.37-41(SDM), |
| #Pages | 5 |
| Date of Issue | 2018-06-18 (SDM) |