Presentation 2018-05-25
Consideration of a C-Band Frequency-Variable Rectifier Using HySIC Technology and Varactor Diode
Keiichi Ishidera, Satoshi Yoshida, Kenjiro Nishikawa, Shigeo Kawasaki,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English) In this paper, we propose a frequency-variable rectifier using HySIC (Hybrid Semiconductor Integrated Circuit) technology and varactor diode.The target frequency in this paper is the C-band (4 to 8 GHz).The proposed rectifier was designed using two kinds of substrates, GaAs substrate and Si substrate.A voltage is applied to the varactor diode mounted on the Si substrate to control the capacitance value, and by changing the impedance of the rectifier, the optimum operating frequency is varied.In the rectifier proposed this paper, it was able to obtain conversion efficiency of 30.1% at 3.73 GHz, 34.7% at 3.93 GHz, 35.8% at 4.33 GHz as measured values.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) HySIC / Rectifier / Variable-Frequency / Wireless Powre Transfer / Varactor Diode
Paper # MW2018-16
Date of Issue 2018-05-17 (MW)

Conference Information
Committee MW
Conference Date 2018/5/24(2days)
Place (in Japanese) (See Japanese page)
Place (in English) Doshisha Univ.
Topics (in Japanese) (See Japanese page)
Topics (in English) Microwave
Chair Masahiro Muraguchi(TUS)
Vice Chair Yoshinori Kogami(Utsunomiya Univ.) / Hiroshi Okazaki(NTTdocomo) / Kenichi Tajima(Mitsubishi Electric)
Secretary Yoshinori Kogami(Tokyo Inst. of Tech.) / Hiroshi Okazaki(HITACHI) / Kenichi Tajima
Assistant Satoshi Ono(Univ. of Electro-Comm.) / Mizuki Motoyoshi(Tohoku Univ.)

Paper Information
Registration To Technical Committee on Microwaves
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Consideration of a C-Band Frequency-Variable Rectifier Using HySIC Technology and Varactor Diode
Sub Title (in English)
Keyword(1) HySIC
Keyword(2) Rectifier
Keyword(3) Variable-Frequency
Keyword(4) Wireless Powre Transfer
Keyword(5) Varactor Diode
1st Author's Name Keiichi Ishidera
1st Author's Affiliation Kagoshima University(Kagoshima Univ.)
2nd Author's Name Satoshi Yoshida
2nd Author's Affiliation Kagoshima University(Kagoshima Univ.)
3rd Author's Name Kenjiro Nishikawa
3rd Author's Affiliation Kagoshima University(Kagoshima Univ.)
4th Author's Name Shigeo Kawasaki
4th Author's Affiliation Aerospace Exploration Agency(JAXA)
Date 2018-05-25
Paper # MW2018-16
Volume (vol) vol.118
Number (no) MW-61
Page pp.pp.35-38(MW),
#Pages 4
Date of Issue 2018-05-17 (MW)