| Presentation | 2018-05-24 The characterization of GaN homo-epitaxial layers grown on GaN substrates by using FT-IR Fumimasa Horikiri, Yoshinobu Narita, Takehiro Yoshida, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | The film thickness of homo epitaxial layers on freestanding GaN substrate was characterized by using Fourier transform infrared spectroscopy (FT-IR). The estimated thickness by FT-IR has good agreement with that of SIMS and cross-sectional cathodoluminescence (CL) intensity mapping image. The spectra of the FT-IR shows the peak around 1650 cm-1, which corresponds to C=N bonding. Thus it indicates that FT-IR has a capability for C impurity detection of 1015 cm-3 orders in GaN film. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | GaN / FT-IR / Film thickness measurement / Multi layers |
| Paper # | ED2018-18,CPM2018-5,SDM2018-13 |
| Date of Issue | 2018-05-17 (ED, CPM, SDM) |
| Conference Information | |
| Committee | ED / CPM / SDM |
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| Conference Date | 2018/5/24(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Toyohashi Univ. of Tech. (VBL) |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Crystal growth, characterization, and devices (compound semiconductors, Si, SiGe, opto-electrical materials), and others |
| Chair | Kunio Tsuda(Toshiba) / Fumihiko Hirose(Yamagata Univ.) / Tatsuya Kunikiyo(Renesas) |
| Vice Chair | Michihiko Suhara(TMU) / Mayumi Takeyama(Kitami Inst. of Tech.) / Takahiro Shinada(Tohoku Univ.) |
| Secretary | Michihiko Suhara(New JRC) / Mayumi Takeyama(NICT) / Takahiro Shinada(Nihon Univ.) |
| Assistant | Toshiyuki Oishi(Saga Univ.) / Tatsuya Iwata(TUT) / Yuichi Akage(NTT) / Hiroya Ikeda(Shizuoka Univ.) / Tetsu Morooka(TOSHIBA MEMORY) |
| Paper Information | |
| Registration To | Technical Committee on Electron Devices / Technical Committee on Component Parts and Materials / Technical Committee on Silicon Device and Materials |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | The characterization of GaN homo-epitaxial layers grown on GaN substrates by using FT-IR |
| Sub Title (in English) | |
| Keyword(1) | GaN |
| Keyword(2) | FT-IR |
| Keyword(3) | Film thickness measurement |
| Keyword(4) | Multi layers |
| 1st Author's Name | Fumimasa Horikiri |
| 1st Author's Affiliation | Sciocs Co. Ltd.(Sciocs) |
| 2nd Author's Name | Yoshinobu Narita |
| 2nd Author's Affiliation | Sciocs Co. Ltd.(Sciocs) |
| 3rd Author's Name | Takehiro Yoshida |
| 3rd Author's Affiliation | Sciocs Co. Ltd.(Sciocs) |
| Date | 2018-05-24 |
| Paper # | ED2018-18,CPM2018-5,SDM2018-13 |
| Volume (vol) | vol.118 |
| Number (no) | ED-58,CPM-59,SDM-60 |
| Page | pp.pp.19-22(ED), pp.19-22(CPM), pp.19-22(SDM), |
| #Pages | 4 |
| Date of Issue | 2018-05-17 (ED, CPM, SDM) |