| Presentation | 2018-05-25 Fabrication of nanocavity Raman silicon laser on (100) SOI substrate with a 45 degree rotated top Si layer Yukiko Yamauchi, Makoto Okano, Susumu Noda, Yasushi Takahashi, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | We have developed silicon Raman lasers based on a high quality-factor (Q) photonic crystal nanocavity which has a potential for a light source in photonic integrated circuits. This device must be fabricated in the [100] crystal direction of the (100) SOI substrate to enhance the Raman gain, and there was a misalignment of 45-rotational degrees from the [110] crystal direction in which the substrate was easily cleavable. In this study, we fabricated a nanocavity Raman laser on a (100) SOI substrate whose crystal orientation of the top Si layer was rotated by 45 degrees relative to the silicon support wafer. The Q values, which is important for the laser oscillation, are as high as those studied thus far, and the room-temperature continuous-wave laser oscillation is observed at an extremely low threshold less than 1 uW. In this new substrate the cleavage is able to be performed in a direction perpendicular to the longitudinal direction of laser. This result helps realizing the mass production of the silicon Raman nanocavity laser using the CMOS process and integration with other Si photonics devices. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Raman laser / Silicon laser / Photonic crystal |
| Paper # | LQE2018-14 |
| Date of Issue | 2018-05-17 (LQE) |
| Conference Information | |
| Committee | LQE / LSJ |
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| Conference Date | 2018/5/24(2days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | Tsuyoshi Yamamoto(Fujitsu Labs.) |
| Vice Chair | Kiichi Hamamoto(Kyusyu Univ.) |
| Secretary | Kiichi Hamamoto(Tohoku Univ.) / (SEI) |
| Assistant | Yasumasa Kawakita(Furukawa Electric Industries) / Naoki Fujiwara(NTT) |
| Paper Information | |
| Registration To | Technical Committee on Lasers and Quantum Electronics / The Laser Society of Japan |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Fabrication of nanocavity Raman silicon laser on (100) SOI substrate with a 45 degree rotated top Si layer |
| Sub Title (in English) | |
| Keyword(1) | Raman laser |
| Keyword(2) | Silicon laser |
| Keyword(3) | Photonic crystal |
| 1st Author's Name | Yukiko Yamauchi |
| 1st Author's Affiliation | Osaka Prefecture University(Osaka Pre Univ.) |
| 2nd Author's Name | Makoto Okano |
| 2nd Author's Affiliation | National Institute of Advanced Industrial Science and Technology(AIST) |
| 3rd Author's Name | Susumu Noda |
| 3rd Author's Affiliation | Kyoto University(Kyoto Univ.) |
| 4th Author's Name | Yasushi Takahashi |
| 4th Author's Affiliation | Osaka Prefecture University(Osaka Pre Univ.) |
| Date | 2018-05-25 |
| Paper # | LQE2018-14 |
| Volume (vol) | vol.118 |
| Number (no) | LQE-62 |
| Page | pp.pp.17-20(LQE), |
| #Pages | 4 |
| Date of Issue | 2018-05-17 (LQE) |