| Presentation | 2018-04-07 Origin of Schottky properties in InGaZnOX/AgOX hetero-interface and its application to flexible device. Yusaku Magari, Hisao Makino, Shinsuke Hashimoto, Kenichiro Hamada, Kentaro Masuda, Mamoru Furuta, |
|---|---|
| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Oxide heterojunction of the In?Ga?Zn?O (IGZO) and the silver oxide (AgOX) has been reported to exhibit better Schottky characteristics than conventional metal?amorphous oxide semiconductor junctions. To the vest of our knowledge, the origin of Schottky properties of InGaZnO/AgOX hetero-interface has not been reported in detail. In this study, we investigated the physical properties of AgOX and the electronic states at IGZO/AgOX interface by the hard X-ray photoelectron spectroscopy with a CrKα (5415 eV) X-ray source. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | InGaZnOx(IGZO) / Silver-oxide / Schottky diode / IGZO/AfOX interface / MES-FET / Flexible device |
| Paper # | SDM2018-8,OME2018-8 |
| Date of Issue | 2018-03-30 (SDM, OME) |
| Conference Information | |
| Committee | SDM / OME |
|---|---|
| Conference Date | 2018/4/6(2days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Okinawaken Seinen Kaikan |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Thin film devices (Si, compound, organic, flexible), Biotechnology, Materials, Characterization, etc. |
| Chair | Tatsuya Kunikiyo(Renesas) / Tatsuo Mori(Aichi Inst. of Tech.) |
| Vice Chair | Takahiro Shinada(Tohoku Univ.) / Yutaka Majima(Tokyo Inst. of Tech.) |
| Secretary | Takahiro Shinada(Tohoku Univ.) / Yutaka Majima(Renesas) |
| Assistant | Hiroya Ikeda(Shizuoka Univ.) / Tetsu Morooka(TOSHIBA MEMORY) / Hirotake Kajii(Osaka Univ.) / Toshihiko Kaji(Tokyo Univ. of Agriculture and Tech.) |
| Paper Information | |
| Registration To | Technical Committee on Silicon Device and Materials / Technical Committee on Organic Molecular Electronics |
|---|---|
| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Origin of Schottky properties in InGaZnOX/AgOX hetero-interface and its application to flexible device. |
| Sub Title (in English) | |
| Keyword(1) | InGaZnOx(IGZO) |
| Keyword(2) | Silver-oxide |
| Keyword(3) | Schottky diode |
| Keyword(4) | IGZO/AfOX interface |
| Keyword(5) | MES-FET |
| Keyword(6) | Flexible device |
| 1st Author's Name | Yusaku Magari |
| 1st Author's Affiliation | Kochi University of Technology(Kochi Univ. of Tech.) |
| 2nd Author's Name | Hisao Makino |
| 2nd Author's Affiliation | Kochi University of Technology(Kochi Univ. of Tech.) |
| 3rd Author's Name | Shinsuke Hashimoto |
| 3rd Author's Affiliation | Kochi University of Technology(Kochi Univ. of Tech.) |
| 4th Author's Name | Kenichiro Hamada |
| 4th Author's Affiliation | Kochi University of Technology(Kochi Univ. of Tech.) |
| 5th Author's Name | Kentaro Masuda |
| 5th Author's Affiliation | Kochi University of Technology(Kochi Univ. of Tech.) |
| 6th Author's Name | Mamoru Furuta |
| 6th Author's Affiliation | Kochi University of Technology(Kochi Univ. of Tech.) |
| Date | 2018-04-07 |
| Paper # | SDM2018-8,OME2018-8 |
| Volume (vol) | vol.118 |
| Number (no) | SDM-1,OME-2 |
| Page | pp.pp.33-36(SDM), pp.33-36(OME), |
| #Pages | 4 |
| Date of Issue | 2018-03-30 (SDM, OME) |