| Presentation | 2018-04-20 [Invited Talk] Memory LSI using crystalline oxide semiconductor FET Jun Koyama, Takako Seki, Yuto Yakubo, Satoru Ohshita, Kazuma Furutani, Takahiko Ishizu, Tomoaki Atsumi, Yoshinori Ando, Daisuke Matsubayashi, Kiyoshi Kato, Takashi Okuda, Masahiro Fujita, Shunpei Yamazaki, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | FETs fabricated with a c-axis aligned crystalline In-Ga-Zn oxide semiconductor (CAAC-IGZO) have an extremely low off-state current of 6 yA/?m at 85?C. Use of this FET enables memory circuits with extremely low power consumption. SEL has developed a 1kbit n-channel only memory module including dynamic logic circuits using a 60nm crystalline oxide semiconductor fabrication technology. This memory module achieves write pulse width and read access time of 20 ns and 45 ns, respectively, at VDD ? 3.3 V. The write and read energies are 97.9 pJ and 123.6 pJ, respectively, and it endures 1014 write cycles. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Crystalline Oxide Semiconductor / CAAC-IGZO / off-state current / n-channel only memory module / dynamic logic circuits |
| Paper # | ICD2018-12 |
| Date of Issue | 2018-04-12 (ICD) |
| Conference Information | |
| Committee | ICD |
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| Conference Date | 2018/4/19(2days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | Hideto Hidaka(Renesas) |
| Vice Chair | Makoto Nagata(Kobe Univ.) |
| Secretary | Makoto Nagata(Univ. of Tokyo) |
| Assistant | Masanori Natsui(Tohoku Univ.) / Masatoshi Tsuge(Socionext) / Hiroyuki Ito(Tokyo Inst. of Tech.) / Pham Konkuha(Univ. of Electro-Comm.) |
| Paper Information | |
| Registration To | Technical Committee on Integrated Circuits and Devices |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | [Invited Talk] Memory LSI using crystalline oxide semiconductor FET |
| Sub Title (in English) | |
| Keyword(1) | Crystalline Oxide Semiconductor |
| Keyword(2) | CAAC-IGZO |
| Keyword(3) | off-state current |
| Keyword(4) | n-channel only memory module |
| Keyword(5) | dynamic logic circuits |
| 1st Author's Name | Jun Koyama |
| 1st Author's Affiliation | Semiconductor Energy Laboratory(SEL) |
| 2nd Author's Name | Takako Seki |
| 2nd Author's Affiliation | Semiconductor Energy Laboratory(SEL) |
| 3rd Author's Name | Yuto Yakubo |
| 3rd Author's Affiliation | Semiconductor Energy Laboratory(SEL) |
| 4th Author's Name | Satoru Ohshita |
| 4th Author's Affiliation | Semiconductor Energy Laboratory(SEL) |
| 5th Author's Name | Kazuma Furutani |
| 5th Author's Affiliation | Semiconductor Energy Laboratory(SEL) |
| 6th Author's Name | Takahiko Ishizu |
| 6th Author's Affiliation | Semiconductor Energy Laboratory(SEL) |
| 7th Author's Name | Tomoaki Atsumi |
| 7th Author's Affiliation | Semiconductor Energy Laboratory(SEL) |
| 8th Author's Name | Yoshinori Ando |
| 8th Author's Affiliation | Semiconductor Energy Laboratory(SEL) |
| 9th Author's Name | Daisuke Matsubayashi |
| 9th Author's Affiliation | Semiconductor Energy Laboratory(SEL) |
| 10th Author's Name | Kiyoshi Kato |
| 10th Author's Affiliation | Semiconductor Energy Laboratory(SEL) |
| 11th Author's Name | Takashi Okuda |
| 11th Author's Affiliation | Semiconductor Energy Laboratory(SEL) |
| 12th Author's Name | Masahiro Fujita |
| 12th Author's Affiliation | The University of Tokyo(The Univ. of Tokyo) |
| 13th Author's Name | Shunpei Yamazaki |
| 13th Author's Affiliation | Semiconductor Energy Laboratory(SEL) |
| Date | 2018-04-20 |
| Paper # | ICD2018-12 |
| Volume (vol) | vol.118 |
| Number (no) | ICD-10 |
| Page | pp.pp.47-52(ICD), |
| #Pages | 6 |
| Date of Issue | 2018-04-12 (ICD) |