Presentation 2018-03-08
[Invited Talk] Present status and prospect of III-V RF devices
Naoki Hara, Tsuyoshi Takahashi, Yoichi Kawano, Yasuhiro Nakasha,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English) III-V Compound Semiconductors have superior properties, such as high electron mobility and high breakdown voltage, compared with Si, and suitable for high frequency applications. Present status and prospect of III-V RF devices are discussed.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) III-V Compound Semiconductor Devices / RF Devices
Paper # EMD2017-73,MR2017-44,SCE2017-44,EID2017-46,ED2017-118,CPM2017-138,SDM2017-118,ICD2017-123,OME2017-67
Date of Issue 2018-03-01 (EMD, MR, SCE, EID, ED, CPM, SDM, ICD, OME)

Conference Information
Committee CPM / ED / EID / SDM / ICD / MR / SCE / OME / EMD
Conference Date 2018/3/8(1days)
Place (in Japanese) (See Japanese page)
Place (in English)
Topics (in Japanese) (See Japanese page)
Topics (in English)
Chair Fumihiko Hirose(Yamagata Univ.) / Kunio Tsuda(Toshiba) / Yuko Kominami(Shizuoka Univ.) / Tatsuya Kunikiyo(Renesas) / Hideto Hidaka(Renesas) / Yoshihiro Okamoto(Ehime Univ.) / Hiroaki Myoren(Saitama Univ.) / Tatsuo Mori(Aichi Inst. of Tech.) / Yoshiteru Abe(NTT)
Vice Chair Mayumi Takeyama(Kitami Inst. of Tech.) / Michihiko Suhara(TMU) / Mutsumi Kimura(Ryukoku Univ.) / Takahiro Shinada(Tohoku Univ.) / Makoto Nagata(Kobe Univ.) / / / Yutaka Majima(Tokyo Inst. of Tech.)
Secretary Mayumi Takeyama(Nihon Univ.) / Michihiko Suhara(Toyohashi Univ. of Tech.) / Mutsumi Kimura(New JRC) / Takahiro Shinada(NICT) / Makoto Nagata(NTT) / (Tokyo Inst. of Tech.) / (Tohoku Univ.) / Yutaka Majima(Renesas) / (Univ. of Tokyo)
Assistant Yuichi Akage(NTT) / Toshiyuki Oishi(Saga Univ.) / Tatsuya Iwata(TUT) / Rumiko Yamaguchi(Akita Univ.) / Hiroyuki Nitta(Japan Display) / Mitsuru Nakata(NHK) / Ryosuke Nonaka(Toshiba) / Takeshi Okuno(Huawei) / Tomokazu Shiga(Univ. of Electro-Comm.) / Hiroya Ikeda(Shizuoka Univ.) / Tetsu Morooka(TOSHIBA MEMORY) / Masanori Natsui(Tohoku Univ.) / Masatoshi Tsuge(Socionext) / Hiroyuki Ito(Tokyo Inst. of Tech.) / Pham Konkuha(Univ. of Electro-Comm.) / Tazumi Nagasawa(Toshiba) / Shuhei Yoshida(Kinki Univ.) / Hiroyuki Akaike(Daido Univ.) / Hirotake Kajii(Osaka Univ.) / Toshihiko Kaji(Tokyo Univ. of Agriculture and Tech.) / Yoshiki Kayano(Univ. of Electro-Comm.)

Paper Information
Registration To Technical Committee on Component Parts and Materials / Technical Committee on Electron Devices / Technical Committee on Electronic Information Displays / Technical Committee on Silicon Device and Materials / Technical Committee on Integrated Circuits and Devices / Technical Committee on Magnetic Recording / Technical Committee on Superconductive Electronics / Technical Committee on Organic Molecular Electronics / Technical Committee on Electromechanical Devices
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) [Invited Talk] Present status and prospect of III-V RF devices
Sub Title (in English)
Keyword(1) III-V Compound Semiconductor Devices
Keyword(2) RF Devices
1st Author's Name Naoki Hara
1st Author's Affiliation Fujitsu/Fujitsu Laboratories(Fujitsu/Fujitsu Labs.)
2nd Author's Name Tsuyoshi Takahashi
2nd Author's Affiliation Fujitsu/Fujitsu Laboratories(Fujitsu/Fujitsu Labs.)
3rd Author's Name Yoichi Kawano
3rd Author's Affiliation Fujitsu/Fujitsu Laboratories(Fujitsu/Fujitsu Labs.)
4th Author's Name Yasuhiro Nakasha
4th Author's Affiliation Fujitsu/Fujitsu Laboratories(Fujitsu/Fujitsu Labs.)
Date 2018-03-08
Paper # EMD2017-73,MR2017-44,SCE2017-44,EID2017-46,ED2017-118,CPM2017-138,SDM2017-118,ICD2017-123,OME2017-67
Volume (vol) vol.117
Number (no) EMD-492,MR-493,SCE-494,EID-495,ED-496,CPM-497,SDM-498,ICD-499,OME-500
Page pp.pp.9-10(EMD), pp.9-10(MR), pp.9-10(SCE), pp.9-10(EID), pp.9-10(ED), pp.9-10(CPM), pp.9-10(SDM), pp.9-10(ICD), pp.9-10(OME),
#Pages 2
Date of Issue 2018-03-01 (EMD, MR, SCE, EID, ED, CPM, SDM, ICD, OME)