| Presentation | 2018-02-28 Electrical Characteristics of Single-Electron Transistor Made of Fe-MgF2 Single-Layer Granular Thin Films Yuki Asai, Shusaku Honjo, Takayuki Gyakushi, Atsushi Tsurumaki-Fukuchi, Masashi Arita, Yasuo Takahashi, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Single-electron transistor (SET) is the expected future integrated device with very low power consumption in operation and high functionality. For realistic device application, with a view to the room-temperature operation it is important to achieve nanodots less than 10 nm in size and stable characteristics. Here we used single-layer granular thin films in which Fe-nanodot arrays are dispersed in a MgF2 insulating matrix as a candidate structure for small-size metal nanodots. The SETs were fabricated by depositing the granular thin film between nano-gap electrodes and their electrical characteristics were investigated between 7 K and 300 K. We observed Coulomb oscillations even at 210 K. Furthermore, the offset charge drift, which is the time-dependent phase shift of Coulomb oscillations of the SET, was much smaller than that of a metal-based SET with an Al single-electron island and Al2O3 tunnel junctions. The results clearly indicate a high time stability of the Coulomb oscillations. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Single-electron transistor / Granular thin film / Coulomb oscillation / Charge offset drift |
| Paper # | ED2017-104,SDM2017-104 |
| Date of Issue | 2018-02-21 (ED, SDM) |
| Conference Information | |
| Committee | ED / SDM |
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| Conference Date | 2018/2/28(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Centennial Hall, Hokkaido Univ. |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Functional nanodevices and related technologies |
| Chair | Kunio Tsuda(Toshiba) / Tatsuya Kunikiyo(Renesas) |
| Vice Chair | Michihiko Suhara(TMU) / Takahiro Shinada(Tohoku Univ.) |
| Secretary | Michihiko Suhara(New JRC) / Takahiro Shinada(NICT) |
| Assistant | Toshiyuki Oishi(Saga Univ.) / Tatsuya Iwata(TUT) / Hiroya Ikeda(Shizuoka Univ.) / Tetsu Morooka(TOSHIBA MEMORY) |
| Paper Information | |
| Registration To | Technical Committee on Electron Devices / Technical Committee on Silicon Device and Materials |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Electrical Characteristics of Single-Electron Transistor Made of Fe-MgF2 Single-Layer Granular Thin Films |
| Sub Title (in English) | |
| Keyword(1) | Single-electron transistor |
| Keyword(2) | Granular thin film |
| Keyword(3) | Coulomb oscillation |
| Keyword(4) | Charge offset drift |
| 1st Author's Name | Yuki Asai |
| 1st Author's Affiliation | Hokkaido University(Hokkaido Univ.) |
| 2nd Author's Name | Shusaku Honjo |
| 2nd Author's Affiliation | Hokkaido University(Hokkaido Univ.) |
| 3rd Author's Name | Takayuki Gyakushi |
| 3rd Author's Affiliation | Hokkaido University(Hokkaido Univ.) |
| 4th Author's Name | Atsushi Tsurumaki-Fukuchi |
| 4th Author's Affiliation | Hokkaido University(Hokkaido Univ.) |
| 5th Author's Name | Masashi Arita |
| 5th Author's Affiliation | Hokkaido University(Hokkaido Univ.) |
| 6th Author's Name | Yasuo Takahashi |
| 6th Author's Affiliation | Hokkaido University(Hokkaido Univ.) |
| Date | 2018-02-28 |
| Paper # | ED2017-104,SDM2017-104 |
| Volume (vol) | vol.117 |
| Number (no) | ED-453,SDM-454 |
| Page | pp.pp.1-6(ED), pp.1-6(SDM), |
| #Pages | 6 |
| Date of Issue | 2018-02-21 (ED, SDM) |