| Presentation | 2018-02-28 Low-temperature charge pumping on silicon-on-insulator devices Tokinobu Watanabe, Masahiro Hori, Yukinori Ono, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | The charge pumping (CP) was applied to a SOI p-i-n diode at 0.3 ? 300 K . We found that The CP current measured below 100 K is strongly dependent on the polarity of the backgate bias. The dependence of the CP current on the rising/falling time is found to differ depending on the polarity of the backgate bias. These results suggest that density of state profile near the conduction and valence-band edges in the SOI devices can be measured separately with the low temperature CP. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | charge pumping / interface defects / SOI / low-temperature |
| Paper # | ED2017-115,SDM2017-115 |
| Date of Issue | 2018-02-21 (ED, SDM) |
| Conference Information | |
| Committee | ED / SDM |
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| Conference Date | 2018/2/28(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Centennial Hall, Hokkaido Univ. |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Functional nanodevices and related technologies |
| Chair | Kunio Tsuda(Toshiba) / Tatsuya Kunikiyo(Renesas) |
| Vice Chair | Michihiko Suhara(TMU) / Takahiro Shinada(Tohoku Univ.) |
| Secretary | Michihiko Suhara(New JRC) / Takahiro Shinada(NICT) |
| Assistant | Toshiyuki Oishi(Saga Univ.) / Tatsuya Iwata(TUT) / Hiroya Ikeda(Shizuoka Univ.) / Tetsu Morooka(TOSHIBA MEMORY) |
| Paper Information | |
| Registration To | Technical Committee on Electron Devices / Technical Committee on Silicon Device and Materials |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Low-temperature charge pumping on silicon-on-insulator devices |
| Sub Title (in English) | |
| Keyword(1) | charge pumping |
| Keyword(2) | interface defects |
| Keyword(3) | SOI |
| Keyword(4) | low-temperature |
| 1st Author's Name | Tokinobu Watanabe |
| 1st Author's Affiliation | University of Toyama(Univ. Toyama) |
| 2nd Author's Name | Masahiro Hori |
| 2nd Author's Affiliation | Shizuoka University(Shizuoka Univ.) |
| 3rd Author's Name | Yukinori Ono |
| 3rd Author's Affiliation | Shizuoka University(Shizuoka Univ.) |
| Date | 2018-02-28 |
| Paper # | ED2017-115,SDM2017-115 |
| Volume (vol) | vol.117 |
| Number (no) | ED-453,SDM-454 |
| Page | pp.pp.51-56(ED), pp.51-56(SDM), |
| #Pages | 6 |
| Date of Issue | 2018-02-21 (ED, SDM) |