| Presentation | 2018-02-23 [Special Invited Talk] Epitaxial Growth of Ge on Si and Photodetector Applications Yasuhiko Ishikawa, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Epitaxial growth of Ge layers on Si and applications to photodetectors (PDs) in the optical communication wavelength range (1.3?1.6 ?m) are described. In spite of the critical layer thickness of Ge on Si as small as a few nm due to the large lattice mismatch of 4%, high-quality epitaxial layers of Ge with an atomically flat surface are directly grown on Si, using a low-temperature buffer layer technique and a post-growth annealing process. Characteristics for PDs of Ge layers on Si are presented. Strain-engineered PDs for the detection wavelength control and applications to electro-absorption optical modulators as well as light emitters are also introduced. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Silicon Photonics / Germanium / Epitaxial Growth / Photodetectors |
| Paper # | LQE2017-152 |
| Date of Issue | 2018-02-16 (LQE) |
| Conference Information | |
| Committee | LQE |
|---|---|
| Conference Date | 2018/2/23(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | Tsuyoshi Yamamoto(Fujitsu Labs.) |
| Vice Chair | Kiichi Hamamoto(Kyusyu Univ.) |
| Secretary | Kiichi Hamamoto(Tohoku Univ.) |
| Assistant | Yasumasa Kawakita(Furukawa Electric Industries) / Naoki Fujiwara(NTT) |
| Paper Information | |
| Registration To | Technical Committee on Lasers and Quantum Electronics |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | [Special Invited Talk] Epitaxial Growth of Ge on Si and Photodetector Applications |
| Sub Title (in English) | |
| Keyword(1) | Silicon Photonics |
| Keyword(2) | Germanium |
| Keyword(3) | Epitaxial Growth |
| Keyword(4) | Photodetectors |
| 1st Author's Name | Yasuhiko Ishikawa |
| 1st Author's Affiliation | Toyohashi University of Technology(Toyohashi Univ. Tech.) |
| Date | 2018-02-23 |
| Paper # | LQE2017-152 |
| Volume (vol) | vol.117 |
| Number (no) | LQE-448 |
| Page | pp.pp.7-10(LQE), |
| #Pages | 4 |
| Date of Issue | 2018-02-16 (LQE) |