| Presentation | 2018-01-30 Measurement of Switching Characteristics and Drain-Gate Interaction of SiC-MOSFET Daiki Taniguchi, Tetsuro Tanaka, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | |
| Paper # | EE2017-68 |
| Date of Issue | 2018-01-22 (EE) |
| Conference Information | |
| Committee | EE |
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| Conference Date | 2018/1/29(2days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Satellite Campus Oita |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | Fujio Kurokawa(Nagasaki Univ.) |
| Vice Chair | Masatoshi Nakahara(Sojo Univ.) / Keiichi Hirose(NTT-F) |
| Secretary | Masatoshi Nakahara(Fukuoka Univ.) / Keiichi Hirose |
| Assistant | kazuhiro Kajiwara(NiAS) / Takashi Matsushita(NTT-F) / Hidenori Maruta(Nagasaki Univ.) |
| Paper Information | |
| Registration To | Technical Committee on Energy Engineering in Electronics and Communications |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Measurement of Switching Characteristics and Drain-Gate Interaction of SiC-MOSFET |
| Sub Title (in English) | |
| Keyword(1) | |
| 1st Author's Name | Daiki Taniguchi |
| 1st Author's Affiliation | Kagoshima University(Kagoshima Univ.) |
| 2nd Author's Name | Tetsuro Tanaka |
| 2nd Author's Affiliation | Kagoshima University(Kagoshima Univ.) |
| Date | 2018-01-30 |
| Paper # | EE2017-68 |
| Volume (vol) | vol.117 |
| Number (no) | EE-424 |
| Page | pp.pp.151-156(EE), |
| #Pages | 6 |
| Date of Issue | 2018-01-22 (EE) |