| Presentation | 2018-01-25 Thin Film Formation Mechanism of Hexagonal Boron Nitride on c-Plane Sapphire Substrates by Low Pressure CVD Takumi Kawarazaki, Naoki Umehara, Tomoyasu Nakama, Hiroko Kominami, Kazuhiko Hara, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | The hexagonal boron nitride (h-BN) thin films were grown on a c-plane sapphire substrate by low pressure chemical vapor deposition using BCl3 and NH3 as sources. First, we investigated the effects of heating methods in order to suppress the gas phase reaction of sources. Next, in order to understand the influences of initial nucleation on the quality of the thin film, the situations of initial nucleation were investigated for the samples grown by changing the growth temperature and the supply rate of HN3 gas. We have found that the growth temperature influences the growth rate and density of nuclear, and the supply amount of NH3 influences the behavior of nucleation. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | hexagonal boron nitride / CVD / thin film / cathodoluminescence |
| Paper # | EID2017-30 |
| Date of Issue | 2018-01-18 (EID) |
| Conference Information | |
| Committee | EID / ITE-IDY / IEIJ-SSL / SID-JC / IEE-EDD |
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| Conference Date | 2018/1/25(2days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Shizuoka Univ., Hamamatsu |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | Yuko Kominami(Shizuoka Univ.) / Yoshihide Fujisaki(NHK) |
| Vice Chair | Mutsumi Kimura(Ryukoku Univ.) / Rumiko Yamaguchi(Akita Univ.) / Munehiro Kimura(Nagaoka Univ. of Tech.) |
| Secretary | Mutsumi Kimura(NTT) / Rumiko Yamaguchi(Tokyo Inst. of Tech.) / Munehiro Kimura(Shizuoka Univ.) / (Tohoku Univ.) |
| Assistant | Hiroyuki Nitta(Japan Display) / Mitsuru Nakata(NHK) / Ryosuke Nonaka(Toshiba) / Takeshi Okuno(Huawei) / Tomokazu Shiga(Univ. of Electro-Comm.) |
| Paper Information | |
| Registration To | Technical Committee on Electronic Information Displays / Technical Group on Information Display / Division of Solid State Light Sources / Society for Information Display Japan Chapter / Technical Meeting on Electron Devices |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Thin Film Formation Mechanism of Hexagonal Boron Nitride on c-Plane Sapphire Substrates by Low Pressure CVD |
| Sub Title (in English) | |
| Keyword(1) | hexagonal boron nitride |
| Keyword(2) | CVD |
| Keyword(3) | thin film |
| Keyword(4) | cathodoluminescence |
| 1st Author's Name | Takumi Kawarazaki |
| 1st Author's Affiliation | Shizuoka University(Shizuoka Univ.) |
| 2nd Author's Name | Naoki Umehara |
| 2nd Author's Affiliation | Shizuoka University(Shizuoka Univ.) |
| 3rd Author's Name | Tomoyasu Nakama |
| 3rd Author's Affiliation | Shizuoka University(Shizuoka Univ.) |
| 4th Author's Name | Hiroko Kominami |
| 4th Author's Affiliation | Shizuoka University(Shizuoka Univ.) |
| 5th Author's Name | Kazuhiko Hara |
| 5th Author's Affiliation | Shizuoka University(Shizuoka Univ.) |
| Date | 2018-01-25 |
| Paper # | EID2017-30 |
| Volume (vol) | vol.117 |
| Number (no) | EID-411 |
| Page | pp.pp.1-4(EID), |
| #Pages | 4 |
| Date of Issue | 2018-01-18 (EID) |