| Presentation | 2018-01-29 Investigation of a POL for mobile equipment using GaN-HEMT Atsushi Saito, Syohei Miyano, Seiya Abe, Satoshi Matumoto, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Recently, miniaturization of power supply is required along with miniaturization and high performance of electric and communication equipment. High frequency switching is effective for miniaturization of the power supply. This paper clarifies that the problems of the fabricated prototype synchronous back converter using GaN-HEMT and the fabricated Si based driver IC are long wire bonding and dead time generator using external capacitor. In addition, we propose strategies for solving the problems. As a result, efficiency of POL at 10 MHz and 30MHz were more than 90 % and 80 %, respectively when Li-ion battery is used as a power source. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | GaN / Gate Driver / High frequency Switchng |
| Paper # | EE2017-47 |
| Date of Issue | 2018-01-22 (EE) |
| Conference Information | |
| Committee | EE |
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| Conference Date | 2018/1/29(2days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Satellite Campus Oita |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | Fujio Kurokawa(Nagasaki Univ.) |
| Vice Chair | Masatoshi Nakahara(Sojo Univ.) / Keiichi Hirose(NTT-F) |
| Secretary | Masatoshi Nakahara(Fukuoka Univ.) / Keiichi Hirose |
| Assistant | kazuhiro Kajiwara(NiAS) / Takashi Matsushita(NTT-F) / Hidenori Maruta(Nagasaki Univ.) |
| Paper Information | |
| Registration To | Technical Committee on Energy Engineering in Electronics and Communications |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Investigation of a POL for mobile equipment using GaN-HEMT |
| Sub Title (in English) | |
| Keyword(1) | GaN |
| Keyword(2) | Gate Driver |
| Keyword(3) | High frequency Switchng |
| 1st Author's Name | Atsushi Saito |
| 1st Author's Affiliation | Kyushu Institute of Technology(KIT) |
| 2nd Author's Name | Syohei Miyano |
| 2nd Author's Affiliation | Kyushu Institute of Technology(KIT) |
| 3rd Author's Name | Seiya Abe |
| 3rd Author's Affiliation | Kyushu Institute of Technology(KIT) |
| 4th Author's Name | Satoshi Matumoto |
| 4th Author's Affiliation | Kyushu Institute of Technology(KIT) |
| Date | 2018-01-29 |
| Paper # | EE2017-47 |
| Volume (vol) | vol.117 |
| Number (no) | EE-424 |
| Page | pp.pp.29-34(EE), |
| #Pages | 6 |
| Date of Issue | 2018-01-22 (EE) |