| Presentation | 2018-01-25 Luminescence characteristics of GaN films grown by chemical vapor deposition using Ga vapor Yuichiro Masuda, Tsuyoshi Nagase, Wataru Kunieda, Tetsuya Kouno, Hiroko Kominami, Kazuhiko Hara, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | We have grown gallium nitride (GaN) thin films on c-plane sapphire substrate by chemical vapor deposition (CVD) using Ga vapor and NH3. It was found that the improvement of crystalline and luminescence characteristics of the GaN films can be achieved for the CVD of this study by depositing a low temperature buffer layer at 600 ℃ before the growth of GaN at high temperature (1100 ℃). It was also suggested that the heat treatment in Ga vapor prior to high temperature growth enhances the lateral growth of GaN films without depositing a low temperature buffer layer, which resulted in the improvement of luminescence property. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | gallium nitride / photoluminescence / chemical vapor deposition / thin films growth |
| Paper # | EID2017-31 |
| Date of Issue | 2018-01-18 (EID) |
| Conference Information | |
| Committee | EID / ITE-IDY / IEIJ-SSL / SID-JC / IEE-EDD |
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| Conference Date | 2018/1/25(2days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Shizuoka Univ., Hamamatsu |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | Yuko Kominami(Shizuoka Univ.) / Yoshihide Fujisaki(NHK) |
| Vice Chair | Mutsumi Kimura(Ryukoku Univ.) / Rumiko Yamaguchi(Akita Univ.) / Munehiro Kimura(Nagaoka Univ. of Tech.) |
| Secretary | Mutsumi Kimura(NTT) / Rumiko Yamaguchi(Tokyo Inst. of Tech.) / Munehiro Kimura(Shizuoka Univ.) / (Tohoku Univ.) |
| Assistant | Hiroyuki Nitta(Japan Display) / Mitsuru Nakata(NHK) / Ryosuke Nonaka(Toshiba) / Takeshi Okuno(Huawei) / Tomokazu Shiga(Univ. of Electro-Comm.) |
| Paper Information | |
| Registration To | Technical Committee on Electronic Information Displays / Technical Group on Information Display / Division of Solid State Light Sources / Society for Information Display Japan Chapter / Technical Meeting on Electron Devices |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Luminescence characteristics of GaN films grown by chemical vapor deposition using Ga vapor |
| Sub Title (in English) | |
| Keyword(1) | gallium nitride |
| Keyword(2) | photoluminescence |
| Keyword(3) | chemical vapor deposition |
| Keyword(4) | thin films growth |
| 1st Author's Name | Yuichiro Masuda |
| 1st Author's Affiliation | Shizuoka University(Shizuoka Univ.) |
| 2nd Author's Name | Tsuyoshi Nagase |
| 2nd Author's Affiliation | Shizuoka University(Shizuoka Univ.) |
| 3rd Author's Name | Wataru Kunieda |
| 3rd Author's Affiliation | Shizuoka University(Shizuoka Univ.) |
| 4th Author's Name | Tetsuya Kouno |
| 4th Author's Affiliation | Shizuoka University(Shizuoka Univ.) |
| 5th Author's Name | Hiroko Kominami |
| 5th Author's Affiliation | Shizuoka University(Shizuoka Univ.) |
| 6th Author's Name | Kazuhiko Hara |
| 6th Author's Affiliation | Shizuoka University(Shizuoka Univ.) |
| Date | 2018-01-25 |
| Paper # | EID2017-31 |
| Volume (vol) | vol.117 |
| Number (no) | EID-411 |
| Page | pp.pp.5-8(EID), |
| #Pages | 4 |
| Date of Issue | 2018-01-18 (EID) |