| Presentation | 2017-12-19 Temperature Dependence of the Transconductance of a Dual Gate Graphene Field Effect Transistor Kenta Sugawara, Takayuki Watanabe, Deepika Yadav, Takahiro Komiyama, Yoshiki Fuse, Maxim Ryzhii, Victor Ryzhii, Hirokazu Fukidome, Maki Suemitsu, Taiichi Otsuji, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | We report on experimental observation of temperature characteristics of a dual gate graphene field effect transisor (DG-GFET). We fabricated the device made of high-quality epitaxial graphene (EG) grown by thermal decomposition of a SiC substrate. And a SiN gate insulator was deposited more thickly than before to prevent the gate leakage current. We measured its I-V characteristics for both gates at different temperatures. We observed improved transconductance and carrier momentum relaxation time at lower temperatures reflecting the improved carrier transport property. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Graphene / Terahertz / Transistor |
| Paper # | ED2017-91 |
| Date of Issue | 2017-12-11 (ED) |
| Conference Information | |
| Committee | ED |
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| Conference Date | 2017/12/18(2days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | RIEC, Tohoku Univ |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Millimeter-wave, terahertz-wave devices and systems |
| Chair | Kunio Tsuda(Toshiba) |
| Vice Chair | Michihiko Suhara(TMU) |
| Secretary | Michihiko Suhara(New JRC) |
| Assistant | Toshiyuki Oishi(Saga Univ.) / Tatsuya Iwata(TUT) |
| Paper Information | |
| Registration To | Technical Committee on Electron Devices |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Temperature Dependence of the Transconductance of a Dual Gate Graphene Field Effect Transistor |
| Sub Title (in English) | |
| Keyword(1) | Graphene |
| Keyword(2) | Terahertz |
| Keyword(3) | Transistor |
| 1st Author's Name | Kenta Sugawara |
| 1st Author's Affiliation | Tohoku University(Tohoku Univ.) |
| 2nd Author's Name | Takayuki Watanabe |
| 2nd Author's Affiliation | Tohoku University(Tohoku Univ.) |
| 3rd Author's Name | Deepika Yadav |
| 3rd Author's Affiliation | Tohoku University(Tohoku Univ.) |
| 4th Author's Name | Takahiro Komiyama |
| 4th Author's Affiliation | Tohoku University(Tohoku Univ.) |
| 5th Author's Name | Yoshiki Fuse |
| 5th Author's Affiliation | Tohoku University(Tohoku Univ.) |
| 6th Author's Name | Maxim Ryzhii |
| 6th Author's Affiliation | Aizu University(Aizu Univ.) |
| 7th Author's Name | Victor Ryzhii |
| 7th Author's Affiliation | Tohoku University(Tohoku Univ.) |
| 8th Author's Name | Hirokazu Fukidome |
| 8th Author's Affiliation | Tohoku University(Tohoku Univ.) |
| 9th Author's Name | Maki Suemitsu |
| 9th Author's Affiliation | Tohoku University(Tohoku Univ.) |
| 10th Author's Name | Taiichi Otsuji |
| 10th Author's Affiliation | Tohoku University(Tohoku Univ.) |
| Date | 2017-12-19 |
| Paper # | ED2017-91 |
| Volume (vol) | vol.117 |
| Number (no) | ED-364 |
| Page | pp.pp.73-76(ED), |
| #Pages | 4 |
| Date of Issue | 2017-12-11 (ED) |