| Presentation | 2017-12-22 Ultra-high power transistor and thyristor consisting of Si solar cell and LED matrix Kensho Okamoto, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | It is known that classical silicon bipolar transistors, i.e. Si junction transistors, consist of Si layer structure of PNP or NPN. Also Si thyristor which is switching type transistor has four-layer structure of PNPN or NPNP. The author found in 2011 that an epoch-making amplifier device was easily produced merely by LED and Si photodiode couple, which were electrically connected in series and placed facing each other. He named the novel transistor “distar”. The distar operated in the same way as conventional bipolar transistor. The distar behaved like a switching transistor thyristor when the distance between LED and Si photodiode became nearer within a certain value. The author named the thyristor-mode distar as diristar. Distar and diristar with high output power can be easily produced by replacing Si photodiode with Si solar cell which has much broader light-receiving area and allowable current. Thus, the discovery of new device “distar” and “diristar” will pave a new way to semiconductor electronics, although they are not known in the field of semiconductor engineering. The strongest merit of the distar and diristar is easiness of production of higher output device. This paper describes the manufacturing process and the characteristics of high-output distar and diristar. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | distar / diristar / transistor / bipolar transistor / thyristor / LED / solar cell / photovoltaic effect |
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| Date of Issue |
| Conference Information | |
| Committee | SDM / EID |
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| Conference Date | 2017/12/22(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Kyoto University |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Si, Si-related materials, device process, electron devices, and display technology |
| Chair | Tatsuya Kunikiyo(Renesas) / Yuko Kominami(Shizuoka Univ.) |
| Vice Chair | Takahiro Shinada(Tohoku Univ.) / Mutsumi Kimura(Ryukoku Univ.) |
| Secretary | Takahiro Shinada(Tohoku Univ.) / Mutsumi Kimura(Renesas) |
| Assistant | Hiroya Ikeda(Shizuoka Univ.) / Tetsu Morooka(TOSHIBA MEMORY) / Rumiko Yamaguchi(Akita Univ.) / Hiroyuki Nitta(Japan Display) / Mitsuru Nakata(NHK) / Ryosuke Nonaka(Toshiba) / Takeshi Okuno(Huawei) / Tomokazu Shiga(Univ. of Electro-Comm.) |
| Paper Information | |
| Registration To | Technical Committee on Silicon Device and Materials / Technical Committee on Electronic Information Displays |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Ultra-high power transistor and thyristor consisting of Si solar cell and LED matrix |
| Sub Title (in English) | |
| Keyword(1) | distar |
| Keyword(2) | diristar |
| Keyword(3) | transistor |
| Keyword(4) | bipolar transistor |
| Keyword(5) | thyristor |
| Keyword(6) | LED |
| Keyword(7) | solar cell |
| Keyword(8) | photovoltaic effect |
| 1st Author's Name | Kensho Okamoto |
| 1st Author's Affiliation | Opto-semiconductor Device Application Laboratory(Opto Device Lab.) |
| Date | 2017-12-22 |
| Paper # | |
| Volume (vol) | vol.117 |
| Number (no) | EID-372,SDM-373 |
| Page | pp.pp.-(), |
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| Date of Issue | |