| Presentation | 2017-12-14 Gate Leakage Issues in Low-Power Oscillator-type Sensor Circuits Yusuke Imanaka, Hiroyuki Ito, Shiro Dosho, Noboru Ishihara, Kazuya Masu, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | A sensor circuit based on a relaxation oscillator has merits such that a sensor signal can be easily digitized using a counter and resolution can be varied according to the measurement time of a counter. In order to operate this circuit with sub-μW consumption, low power consumption of a comparator that consumes steady current is a problem. Since the response time of the comparator is getting worse due to low power consumption, in the sensor circuit based on a relaxation oscillator using this, the problem is that the measurement accuracy is getting worse. In this research group, we are developing an oscillator type sensor circuit using 180 nm Si CMOS process, but in this paper we investigated the use of 65 nm Si CMOS process to improve response speed . As a result of analysis by circuit simulation,in the case of aiming for sub-μW class operation, it was found that when using a relatively fine transistor, it may not operate properly due to the influence of gate leak. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | |
| Paper # | CAS2017-96,ICD2017-84,CPSY2017-93 |
| Date of Issue | 2017-12-07 (CAS, ICD, CPSY) |
| Conference Information | |
| Committee | ICD / CPSY / CAS |
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| Conference Date | 2017/12/14(2days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Art Hotel Ishigakijima |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | Hideto Hidaka(Renesas) / Koji Nakano(Hiroshima Univ.) / Mitsuru Hiraki(Renesas) |
| Vice Chair | Makoto Nagata(Kobe Univ.) / Hidetsugu Irie(Univ. of Tokyo) / Takashi Miyoshi(Fujitsu) / Hideaki Okazaki(Shonan Inst. of Tech.) |
| Secretary | Makoto Nagata(Univ. of Tokyo) / Hidetsugu Irie(Panasonic) / Takashi Miyoshi(Utsunomiya Univ.) / Hideaki Okazaki(Hokkaido Univ.) |
| Assistant | Masanori Natsui(Tohoku Univ.) / Masatoshi Tsuge(Socionext) / Hiroyuki Ito(Tokyo Inst. of Tech.) / Pham Konkuha(Univ. of Electro-Comm.) / Yasuaki Ito(Hiroshima Univ.) / Tomoaki Tsumura(Nagoya Inst. of Tech.) / Yohei Nakamura(Hitachi) |
| Paper Information | |
| Registration To | Technical Committee on Integrated Circuits and Devices / Technical Committee on Computer Systems / Technical Committee on Circuits and Systems |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Gate Leakage Issues in Low-Power Oscillator-type Sensor Circuits |
| Sub Title (in English) | |
| Keyword(1) | |
| Keyword(2) | |
| Keyword(3) | |
| 1st Author's Name | Yusuke Imanaka |
| 1st Author's Affiliation | Tokyo Institute of Technology(Tokyo Tech.) |
| 2nd Author's Name | Hiroyuki Ito |
| 2nd Author's Affiliation | Tokyo Institute of Technology(Tokyo Tech.) |
| 3rd Author's Name | Shiro Dosho |
| 3rd Author's Affiliation | Tokyo Institute of Technology(Tokyo Tech.) |
| 4th Author's Name | Noboru Ishihara |
| 4th Author's Affiliation | Tokyo Institute of Technology(Tokyo Tech.) |
| 5th Author's Name | Kazuya Masu |
| 5th Author's Affiliation | Tokyo Institute of Technology(Tokyo Tech.) |
| Date | 2017-12-14 |
| Paper # | CAS2017-96,ICD2017-84,CPSY2017-93 |
| Volume (vol) | vol.117 |
| Number (no) | CAS-343,ICD-344,CPSY-345 |
| Page | pp.pp.137-137(CAS), pp.137-137(ICD), pp.137-137(CPSY), |
| #Pages | 1 |
| Date of Issue | 2017-12-07 (CAS, ICD, CPSY) |