Presentation | 2017-12-22 Modification effects of ferroelectric thick-film properties on silicon substrates by proton beam irradiation Jun Hirade, Masaki Yamaguchi, Yoichiro Masuda, |
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PDF Download Page | PDF download Page Link |
Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | Ferroelectric thin films deposited on silicon substrates are expected to be applied to nonvolatile memories, photonic crystals, piezoelectric MEMS, and the like. However, when considering piezoelectric application, thick film patterning problem arises. A proton is an elementary particle having a mass of about 1,800 times that of an electron. Therefore, it is considered that the scattering inside the substance is less than the electron. Thus, we are proposing a new processing technology using proton beam. In this report, we investigated the influence of proton irradiation on bismuth titanate thick film, which is a lead-free ferroelectric material on a silicon substrate. When the proton beam was irradiated on the crystallized film, it was confirmed that the crystallinity was deteriorated by the increase in irradiation amount from the measurement result of X-ray diffraction intensity and ferroelectric properties. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | Proton beam / Bi4Ti3O12 |
Paper # | EID2017-22,SDM2017-83 |
Date of Issue | 2017-12-15 (EID, SDM) |
Conference Information | |
Committee | SDM / EID |
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Conference Date | 2017/12/22(1days) |
Place (in Japanese) | (See Japanese page) |
Place (in English) | Kyoto University |
Topics (in Japanese) | (See Japanese page) |
Topics (in English) | Si, Si-related materials, device process, electron devices, and display technology |
Chair | Tatsuya Kunikiyo(Renesas) / Yuko Kominami(Shizuoka Univ.) |
Vice Chair | Takahiro Shinada(Tohoku Univ.) / Mutsumi Kimura(Ryukoku Univ.) |
Secretary | Takahiro Shinada(Tohoku Univ.) / Mutsumi Kimura(Renesas) |
Assistant | Hiroya Ikeda(Shizuoka Univ.) / Tetsu Morooka(TOSHIBA MEMORY) / Rumiko Yamaguchi(Akita Univ.) / Hiroyuki Nitta(Japan Display) / Mitsuru Nakata(NHK) / Ryosuke Nonaka(Toshiba) / Takeshi Okuno(Huawei) / Tomokazu Shiga(Univ. of Electro-Comm.) |
Paper Information | |
Registration To | Technical Committee on Silicon Device and Materials / Technical Committee on Electronic Information Displays |
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Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | Modification effects of ferroelectric thick-film properties on silicon substrates by proton beam irradiation |
Sub Title (in English) | |
Keyword(1) | Proton beam |
Keyword(2) | Bi4Ti3O12 |
1st Author's Name | Jun Hirade |
1st Author's Affiliation | Shibaura Institute of Technology(Shibaura Inst. of Tech.) |
2nd Author's Name | Masaki Yamaguchi |
2nd Author's Affiliation | Shibaura Institute of Technology(Shibaura Inst. of Tech.) |
3rd Author's Name | Yoichiro Masuda |
3rd Author's Affiliation | Hachinohe Institute of Technology(Hachinohe Inst. of Tech.) |
Date | 2017-12-22 |
Paper # | EID2017-22,SDM2017-83 |
Volume (vol) | vol.117 |
Number (no) | EID-372,SDM-373 |
Page | pp.pp.57-62(EID), pp.57-62(SDM), |
#Pages | 6 |
Date of Issue | 2017-12-15 (EID, SDM) |