Presentation 2017-12-22
Modification effects of ferroelectric thick-film properties on silicon substrates by proton beam irradiation
Jun Hirade, Masaki Yamaguchi, Yoichiro Masuda,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English) Ferroelectric thin films deposited on silicon substrates are expected to be applied to nonvolatile memories, photonic crystals, piezoelectric MEMS, and the like. However, when considering piezoelectric application, thick film patterning problem arises. A proton is an elementary particle having a mass of about 1,800 times that of an electron. Therefore, it is considered that the scattering inside the substance is less than the electron. Thus, we are proposing a new processing technology using proton beam. In this report, we investigated the influence of proton irradiation on bismuth titanate thick film, which is a lead-free ferroelectric material on a silicon substrate. When the proton beam was irradiated on the crystallized film, it was confirmed that the crystallinity was deteriorated by the increase in irradiation amount from the measurement result of X-ray diffraction intensity and ferroelectric properties.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) Proton beam / Bi4Ti3O12
Paper # EID2017-22,SDM2017-83
Date of Issue 2017-12-15 (EID, SDM)

Conference Information
Committee SDM / EID
Conference Date 2017/12/22(1days)
Place (in Japanese) (See Japanese page)
Place (in English) Kyoto University
Topics (in Japanese) (See Japanese page)
Topics (in English) Si, Si-related materials, device process, electron devices, and display technology
Chair Tatsuya Kunikiyo(Renesas) / Yuko Kominami(Shizuoka Univ.)
Vice Chair Takahiro Shinada(Tohoku Univ.) / Mutsumi Kimura(Ryukoku Univ.)
Secretary Takahiro Shinada(Tohoku Univ.) / Mutsumi Kimura(Renesas)
Assistant Hiroya Ikeda(Shizuoka Univ.) / Tetsu Morooka(TOSHIBA MEMORY) / Rumiko Yamaguchi(Akita Univ.) / Hiroyuki Nitta(Japan Display) / Mitsuru Nakata(NHK) / Ryosuke Nonaka(Toshiba) / Takeshi Okuno(Huawei) / Tomokazu Shiga(Univ. of Electro-Comm.)

Paper Information
Registration To Technical Committee on Silicon Device and Materials / Technical Committee on Electronic Information Displays
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Modification effects of ferroelectric thick-film properties on silicon substrates by proton beam irradiation
Sub Title (in English)
Keyword(1) Proton beam
Keyword(2) Bi4Ti3O12
1st Author's Name Jun Hirade
1st Author's Affiliation Shibaura Institute of Technology(Shibaura Inst. of Tech.)
2nd Author's Name Masaki Yamaguchi
2nd Author's Affiliation Shibaura Institute of Technology(Shibaura Inst. of Tech.)
3rd Author's Name Yoichiro Masuda
3rd Author's Affiliation Hachinohe Institute of Technology(Hachinohe Inst. of Tech.)
Date 2017-12-22
Paper # EID2017-22,SDM2017-83
Volume (vol) vol.117
Number (no) EID-372,SDM-373
Page pp.pp.57-62(EID), pp.57-62(SDM),
#Pages 6
Date of Issue 2017-12-15 (EID, SDM)